MT47H32M8BP-3:B TR

Product Overview

Category

MT47H32M8BP-3:B TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, tablets, and other digital devices that require high-speed data storage and retrieval.

Characteristics

• High-speed data access: The MT47H32M8BP-3:B TR offers fast data access and transfer rates, making it suitable for applications that require quick processing.
• Large storage capacity: With a capacity of 32 megabits (4 megabytes), this DRAM chip provides ample space for storing data.
• Low power consumption: The chip is designed to operate efficiently with low power consumption, making it suitable for battery-powered devices.
• Compact package: The MT47H32M8BP-3:B TR is available in a compact package, allowing for easy integration into various electronic devices.
• RoHS compliant: This product meets the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT47H32M8BP-3:B TR is typically packaged in trays or reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in multiples of 100 or 1000 units.

Specifications

• Memory Type: DDR3 SDRAM
• Organization: 32M words x 8 bits
• Supply Voltage: 1.5V ± 0.075V
• Clock Frequency: 800 MHz
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 78 pins

Detailed Pin Configuration

The pin configuration of the MT47H32M8BP-3:B TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. ODT
46. VSS
47. DQS0
48. DM0
49. VREFCA
50. VSS
51. DQS1
52. DM1
53. VREFDQ
54. VSS
55. DQS2
56. DM2
57. VSS
58. VSS
59. DQS3
60. DM3
61. VSS
62. VSS
63. DQS4
64. DM4
65. VSS
66. VSS
67. DQS5
68. DM5
69. VSS
70. VSS
71. DQS6
72. DM6
73. VSS
74. VSS
75. DQS7
76. DM7
77. VSS
78. VSS

Functional Features

• High-speed data transfer: The MT47H32M8BP-3:B TR supports a clock frequency of 800 MHz, enabling fast and efficient data transfer.
• Burst mode operation: This DRAM chip is capable of burst mode operation, allowing for consecutive data access without the need for repeated address input.
• Auto-refresh and self-refresh modes: It includes auto-refresh and self-refresh modes to optimize power consumption and maintain data integrity during idle periods.
• On-die termination (ODT): The ODT feature helps reduce signal reflections and improve signal quality by matching the impedance of the memory bus.

Advantages and Disadvantages

Advantages

• High-speed data access and transfer rates
• Large storage capacity
• Low power consumption
• Compact package for easy integration
• RoHS compliant, environmentally friendly

Disadvantages

• Requires proper voltage regulation for optimal performance
• Sensitive to electrostatic discharge