MT47H256M8THN-25E:M TR
Product Overview
Category
The MT47H256M8THN-25E:M TR belongs to the category of semiconductor memory products.
Use
This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.
Characteristics
- High-speed operation
- Large storage capacity
- Low power consumption
- Reliable performance
Package
The MT47H256M8THN-25E:M TR is available in a compact and durable package that ensures protection during handling and transportation.
Essence
The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.
Packaging/Quantity
The MT47H256M8THN-25E:M TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.
Specifications
- Model: MT47H256M8THN-25E:M TR
- Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
- Capacity: 256 Megabits (32 Megabytes)
- Speed: 25E (DDR2-400)
- Organization: 256M x 8
- Voltage: 1.8V
- Operating Temperature Range: -40°C to +85°C
Detailed Pin Configuration
The MT47H256M8THN-25E:M TR has a total of 60 pins, which are arranged as follows:
- VDD
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSS
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- VSS
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- VSS
- WE#
- CAS#
- RAS#
- CS#
- BA0
- BA1
- CLK
- CKE
- DQM0
- DQM1
- DM0
- DM1
- VDD
- VDD
- VREF
- VSS
- VSS
- NC
- NC
- VDD
Functional Features
- High-speed data transfer
- Burst mode operation
- Auto-refresh and self-refresh modes
- On-die termination (ODT) for improved signal integrity
- Programmable read and write latency
Advantages and Disadvantages
Advantages
- Fast data access and retrieval
- Large storage capacity
- Low power consumption
- Reliable performance
- Compatibility with various electronic devices
Disadvantages
- Relatively higher cost compared to other memory technologies
- Limited scalability beyond a certain capacity
Working Principles
The MT47H256M8THN-25E:M TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It uses a clock signal to synchronize data transfers and employs a capacitor-based storage cell to store binary information.
Detailed Application Field Plans
The MT47H256M8THN-25E:M TR finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles
Detailed and Complete Alternative Models
- MT47H128M8BT-3:G
- MT47H64M16HR-25E:H
- MT47H32M16BN-3:G
- MT47H16M16BG-37E:B
- MT47H8M16HR-25E:H
These alternative models offer similar functionality and specifications to the MT47H256M8THN-25E:M TR, providing options for different memory capacity requirements.
In conclusion, the MT47H256M8THN-25E:M TR is a high-performance semiconductor memory product that offers fast data access, large storage capacity, and low power consumption. Its functional features and compatibility make it suitable for a wide range
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT47H256M8THN-25E:M TR i tekniska lösningar
1. What is the MT47H256M8THN-25E:M TR?
The MT47H256M8THN-25E:M TR is a specific model of DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory) chip manufactured by Micron Technology. It has a capacity of 256 Megabits (Mb) and operates at a speed of 800 Megahertz (MHz).
2. What are the key features of the MT47H256M8THN-25E:M TR?
Some key features of the MT47H256M8THN-25E:M TR include a low operating voltage of 1.5V, a high-speed data transfer rate of 1600 Megabits per second (Mbps), and a small form factor with a 78-ball FBGA (Fine-Pitch Ball Grid Array) package.
3. What are the typical applications of the MT47H256M8THN-25E:M TR?
The MT47H256M8THN-25E:M TR is commonly used in various technical solutions such as computer systems, servers, networking equipment, industrial automation, medical devices, and telecommunications infrastructure.
4. What is the maximum operating temperature range for the MT47H256M8THN-25E:M TR?
The MT47H256M8THN-25E:M TR has a maximum operating temperature range of -40°C to +85°C, making it suitable for use in both commercial and industrial environments.
5. What is the power supply voltage required for the MT47H256M8THN-25E:M TR?
The MT47H256M8THN-25E:M TR requires a power supply voltage of 1.5V, which is the standard voltage for DDR3 SDRAM modules.
6. What is the data transfer rate of the MT47H256M8THN-25E:M TR?
The MT47H256M8THN-25E:M TR has a data transfer rate of 1600 Megabits per second (Mbps), allowing for high-speed and efficient data processing.
7. Can the MT47H256M8THN-25E:M TR be used as a replacement for other DDR3 SDRAM chips?
Yes, the MT47H256M8THN-25E:M TR can be used as a drop-in replacement for other DDR3 SDRAM chips with similar specifications, provided that the system supports the required voltage and speed.
8. Does the MT47H256M8THN-25E:M TR support ECC (Error Correction Code) functionality?
No, the MT47H256M8THN-25E:M TR does not support ECC functionality. It is a non-ECC memory module.
9. Is the MT47H256M8THN-25E:M TR compatible with both 32-bit and 64-bit systems?
Yes, the MT47H256M8THN-25E:M TR is compatible with both 32-bit and 64-bit systems, as long as the system's memory controller supports DDR3 SDRAM.
10. What is the warranty period for the MT47H256M8THN-25E:M TR?
The warranty period for the MT47H256M8THN-25E:M TR may vary depending on the manufacturer or supplier. It is recommended to check the specific warranty terms provided by the seller or consult Micron Technology's official documentation for accurate information.