Micron Technology Inc.
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MT47H256M4CF-25E:H
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MT47H256M4CF-25E:H

Product Overview

Category

MT47H256M4CF-25E:H belongs to the category of semiconductor memory products.

Use

It is primarily used as a high-density random access memory (RAM) in various electronic devices and systems.

Characteristics

  • High density: The MT47H256M4CF-25E:H offers a large storage capacity, allowing for efficient data storage and retrieval.
  • Fast access time: With a low latency, this memory product enables quick data access and processing.
  • Low power consumption: It is designed to operate with minimal power requirements, making it energy-efficient.
  • Reliable performance: The MT47H256M4CF-25E:H ensures stable and consistent performance even under demanding conditions.

Package

This product is available in a compact and standardized package, which facilitates easy integration into electronic circuits.

Essence

The essence of MT47H256M4CF-25E:H lies in its ability to provide high-density and fast-access memory storage, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

The MT47H256M4CF-25E:H is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging and quantity can vary based on customer requirements.

Specifications

  • Memory Type: Random Access Memory (RAM)
  • Organization: 256 Megabit x 4
  • Supply Voltage: 2.5V
  • Operating Temperature Range: -40°C to +85°C
  • Speed Grade: DDR3-1600
  • Package Type: FBGA (Fine-pitch Ball Grid Array)

Detailed Pin Configuration

The MT47H256M4CF-25E:H follows a specific pin configuration, as outlined below:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDD
  20. NC (No Connection)
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. VSS
  30. A0
  31. A1
  32. A2
  33. A3
  34. A4
  35. A5
  36. A6
  37. A7
  38. VSS
  39. A8
  40. A9
  41. A10
  42. A11
  43. A12
  44. A13
  45. A14
  46. A15
  47. VDD
  48. A16
  49. A17
  50. A18
  51. A19
  52. BA0
  53. BA1
  54. VSS
  55. CK
  56. CKE
  57. CS#
  58. WE#
  59. CAS#
  60. RAS#
  61. DM0
  62. DM1
  63. VSS
  64. DQS0
  65. DQS#0
  66. VDD
  67. DQS1
  68. DQS#1
  69. VSS
  70. DQML
  71. DQMU
  72. VSS
  73. DQSL
  74. DQSU
  75. VDD
  76. VREFCA
  77. VSS
  78. VREFDQ
  79. VDD
  80. VSS

Functional Features

The MT47H256M4CF-25E:H offers the following functional features:

  1. High-speed data transfer: It supports fast data transfer rates, enabling efficient communication between the memory and other components.
  2. Auto-refresh capability: The memory automatically refreshes data to maintain its integrity and prevent data loss.
  3. Burst mode operation: It allows for consecutive data access, optimizing performance in applications that require sequential data retrieval.
  4. On-die termination (ODT): This feature helps reduce signal reflections and improve signal quality, enhancing overall system performance.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast access time
  • Low power consumption
  • Reliable performance
  • Compact package size

Disadvantages

  • Limited compatibility with older systems that do not support DDR3 technology
  • Higher cost compared to lower-density memory options

Working Principles

MT47H256M4CF-25E:H operates based on DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT47H256M4CF-25E:H i tekniska lösningar

  1. Question: What is the MT47H256M4CF-25E:H?
    Answer: The MT47H256M4CF-25E:H is a specific type of memory module commonly used in technical solutions.

  2. Question: What is the capacity of the MT47H256M4CF-25E:H?
    Answer: The MT47H256M4CF-25E:H has a capacity of 256 megabits (32 megabytes).

  3. Question: What is the speed rating of the MT47H256M4CF-25E:H?
    Answer: The MT47H256M4CF-25E:H has a speed rating of 25E, which indicates a maximum operating frequency of 250 MHz.

  4. Question: What is the form factor of the MT47H256M4CF-25E:H?
    Answer: The MT47H256M4CF-25E:H follows the DDR2 SDRAM form factor.

  5. Question: What voltage does the MT47H256M4CF-25E:H operate at?
    Answer: The MT47H256M4CF-25E:H operates at a voltage of 1.8V.

  6. Question: Can the MT47H256M4CF-25E:H be used in industrial applications?
    Answer: Yes, the MT47H256M4CF-25E:H is suitable for use in industrial applications due to its robust design and reliability.

  7. Question: Is the MT47H256M4CF-25E:H compatible with other memory modules?
    Answer: The MT47H256M4CF-25E:H follows industry-standard specifications, making it compatible with other DDR2 SDRAM modules.

  8. Question: What is the operating temperature range of the MT47H256M4CF-25E:H?
    Answer: The MT47H256M4CF-25E:H can operate within a temperature range of -40°C to +85°C.

  9. Question: Can the MT47H256M4CF-25E:H be used in high-performance computing systems?
    Answer: Yes, the MT47H256M4CF-25E:H is suitable for use in high-performance computing systems that require fast and reliable memory access.

  10. Question: Is the MT47H256M4CF-25E:H backward compatible with DDR1 SDRAM?
    Answer: No, the MT47H256M4CF-25E:H is not backward compatible with DDR1 SDRAM as it follows the DDR2 SDRAM standard.