MT46V64M4BG-5B:GTR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module for electronic devices

Characteristics: - High-speed synchronous dynamic random-access memory (SDRAM) - Low power consumption - Large storage capacity - Reliable performance

Package: BGA (Ball Grid Array)

Essence: The MT46V64M4BG-5B:GTR is a high-performance memory chip designed for use in various electronic devices. It provides fast and efficient data storage capabilities, making it suitable for applications that require quick access to large amounts of information.

Packaging/Quantity: The MT46V64M4BG-5B:GTR is typically sold in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: SDRAM
• Density: 64 Megabits (Mb)
• Organization: 4 Megabytes (MB) x 4 banks x 4 bits
• Data Rate: 400 MHz
• Operating Voltage: 2.5V
• Interface: Parallel
• Clock Frequency: 200 MHz
• Latency: CL5
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V64M4BG-5B:GTR has a total of 66 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQM0
21. DQM1
22. VSS
23. CAS
24. RAS
25. WE
26. CKE
27. CS0
28. CS1
29. BA0
30. BA1
31. A0
32. A1
33. A2
34. A3
35. A4
36. A5
37. A6
38. A7
39. A8
40. A9
41. A10
42. A11
43. A12
44. A13
45. A14
46. A15
47. A16
48. A17
49. A18
50. A19
51. A20
52. A21
53. A22
54. A23
55. VDD
56. VDD
57. VDD
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient memory access
• Auto-refresh and self-refresh modes for power saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages: - Fast and reliable data storage - Low power consumption - Large storage capacity - Flexible performance optimization options

Disadvantages: - Requires proper handling and installation to prevent damage - May be relatively expensive compared to other memory options

Working Principles

The MT46V64M4BG-5B:GTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into banks and accessed through a parallel interface.

When a read or write operation is initiated, the memory controller sends the appropriate commands and addresses to the chip. The data is then transferred between the memory cells and the controller using a synchronized clock signal. The MT46V64M4BG-5B:GTR supports burst mode operation, allowing for efficient transfer of consecutive data.

Detailed Application Field Plans

The MT46V64M4BG-5B:GTR is widely used in various electronic devices that require high-speed and reliable data storage. Some common application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers
4. Networking Equipment
5. Gaming Consoles
6. Mobile Devices
7. Automotive Electronics 8