MT46V32M8CY-5B:M

Product Overview

Category

The MT46V32M8CY-5B:M belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations

Package

The MT46V32M8CY-5B:M is available in a compact and standardized package, commonly known as a dual in-line memory module (DIMM).

Essence

The essence of this product lies in its ability to provide high-speed and efficient data storage and retrieval functions, crucial for the smooth operation of electronic devices.

Packaging/Quantity

The MT46V32M8CY-5B:M is typically packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

• Model: MT46V32M8CY-5B:M
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 32 Meg x 8
• Speed: 5 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Synchronous DRAM (SDRAM)
• Operating Temperature: -40°C to +85°C
• Package Type: Dual in-line memory module (DIMM)

Detailed Pin Configuration

The MT46V32M8CY-5B:M has a specific pin configuration that enables proper connectivity and communication with the host device. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VSS

Functional Features

• High-speed data transfer rate
• Low power consumption
• Easy integration with various electronic devices
• Reliable and stable performance
• Compatibility with industry-standard interfaces

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Suitable for high-performance applications
• Cost-effective compared to other memory technologies

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher power consumption compared to non-volatile memory
• Susceptible to data loss in case of power failure

Working Principles

The MT46V32M8CY-5B:M operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. The memory controller sends commands to read or write data to specific memory addresses, enabling fast and efficient data access.

Detailed Application Field Plans

The MT46V32M8CY-5B:M is widely used in various electronic devices and applications, including:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Mobile phones and tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial automation systems

Detailed and Complete Alternative Models

1. MT46V32M8TG-75B:G
2. MT46V32M8BN-5B:B
3. MT46V32M8P-6T:A
4. MT46V32M8FN-6T:F
5. MT46V32M8TG-6T:G

These alternative models offer similar specifications and functionality to the MT46V32M8CY-5B:M, providing flexibility for different design requirements.

In conclusion, the MT46V32M8CY-5B:M is a dynamic random access memory (DRAM) chip that offers high-speed data storage and retrieval capabilities. It is widely used in various electronic devices and applications, providing reliable performance and large storage capacity. While it has advantages such as fast data access and cost