MT46H128M16LFB7-5 WT:B TR

Basic Information Overview

• Category: Memory module
• Use: Used for storing and retrieving data in electronic devices
• Characteristics: High-speed, non-volatile, random access memory
• Package: Small form factor, surface mount package
• Essence: Provides temporary storage for data during device operation
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Part Number: MT46H128M16LFB7-5 WT:B TR
• Density: 2Gb (Gigabits)
• Organization: 128M x 16
• Speed: DDR3-1600 (PC3-12800)
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-pitch Ball Grid Array)
• Pin Count: 96 pins

Detailed Pin Configuration

The MT46H128M16LFB7-5 WT:B TR memory module has a total of 96 pins. The pin configuration is as follows:

• Pins 1-48: Data Input/Output (DQ0-DQ47)
• Pins 49-56: Address Inputs (A0-A7)
• Pins 57-64: Bank Select Inputs (BA0-BA2)
• Pins 65-66: Chip Select Inputs (CS0#, CS1#)
• Pins 67-68: Clock Inputs (CK, CK#)
• Pins 69-70: Data Mask Inputs (DM0#, DM1#)
• Pins 71-72: Data Strobe Inputs (DQS0, DQS0#)
• Pins 73-74: Data Strobe Inputs (DQS1, DQS1#)
• Pins 75-76: Data Strobe Inputs (DQS2, DQS2#)
• Pins 77-78: Data Strobe Inputs (DQS3, DQS3#)
• Pins 79-80: Data Strobe Inputs (DQS4, DQS4#)
• Pins 81-82: Data Strobe Inputs (DQS5, DQS5#)
• Pins 83-84: Data Strobe Inputs (DQS6, DQS6#)
• Pins 85-86: Data Strobe Inputs (DQS7, DQS7#)
• Pins 87-88: Data Strobe Inputs (DQS8, DQS8#)
• Pins 89-90: Data Strobe Inputs (DQS9, DQS9#)
• Pins 91-92: Data Strobe Inputs (DQS10, DQS10#)
• Pins 93-94: Data Strobe Inputs (DQS11, DQS11#)
• Pins 95-96: VDD and VSS (Power and Ground)

Functional Features

• High-speed data transfer rate
• Non-volatile memory retains data even when power is removed
• Random access allows for quick retrieval of specific data
• Low power consumption
• Error correction capabilities for data integrity

Advantages and Disadvantages

Advantages: - High-speed performance enhances overall system speed - Non-volatile nature ensures data persistence - Random access enables efficient data retrieval - Low power consumption helps conserve energy

Disadvantages: - Limited storage capacity compared to other memory types - Relatively higher cost per unit compared to some alternatives - Susceptible to physical damage if mishandled

Working Principles

The MT46H128M16LFB7-5 WT:B TR memory module operates based on the principles of DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory). It utilizes a clock signal to synchronize data transfers and employs advanced circuitry to store and retrieve data in a highly efficient manner.

Detailed Application Field Plans

The MT46H128M16LFB7-5 WT:B TR memory module is commonly used in various electronic devices, including: - Personal computers - Laptops - Servers - Networking equipment - Consumer electronics

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