MT29F64G08CECCBH1-12ITZ:C

Product Overview

Category

MT29F64G08CECCBH1-12ITZ:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CECCBH1-12ITZ:C offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08CECCBH1-12ITZ:C is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory is available in a compact package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F64G08CECCBH1-12ITZ:C is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Model: MT29F64G08CECCBH1-12ITZ:C
• Storage Capacity: 64 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface-Mount Device (SMD)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F64G08CECCBH1-12ITZ:C is as follows:

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. RE#
26. WE#
27. CLE
28. ALE
29. WP#
30. R/B#
31. CE#
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: The MT29F64G08CECCBH1-12ITZ:C supports fast and efficient page program operations, allowing for quick data storage.
• Block Erase Operation: This NAND flash memory enables block erase operations, which facilitate the deletion of large chunks of data.
• Read Operation: The product offers high-speed read operations, enabling quick access to stored data.
• Wear-Leveling Algorithm: The MT29F64G08CECCBH1-12ITZ:C incorporates a wear-leveling algorithm that evenly distributes write operations across memory cells, ensuring longevity and reliability.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance for demanding applications.
• Low power consumption helps prolong battery life in portable devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F64G08CECCBH1-12ITZ:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells store information by trapping electric charges within floating gate transistors. The presence or absence of charges determines the binary state of each memory cell, representing either a "0" or a "1". Data can be written to and read from these memory cells using specific electrical signals and control operations.

Detailed Application Field Plans

The MT29F64G08CECCBH1-12ITZ:C is widely used in various electronic devices, including: - Smartphones and tablets: Provides high-capacity storage for apps, media files, and user data. - Digital cameras: Enables fast and reliable storage of high-resolution photos