MT29F4G08ABAEAWP:E TR

Product Overview

Category

MT29F4G08ABAEAWP:E TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABAEAWP:E TR offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained applications.
• Low power consumption: MT29F4G08ABAEAWP:E TR consumes minimal power, contributing to energy efficiency in devices.

Package and Quantity

MT29F4G08ABAEAWP:E TR is typically packaged in a surface-mount package (SMT) with a specific quantity per reel. Please refer to the manufacturer's specifications for detailed packaging information.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to XXX MB/s (specific value to be provided by the manufacturer)
• Erase/Program Cycles: XXX (specific value to be provided by the manufacturer)

Pin Configuration

The detailed pin configuration of MT29F4G08ABAEAWP:E TR can be found in the datasheet provided by the manufacturer. Please refer to the datasheet for accurate pin descriptions and connections.

Functional Features

• Page Read/Write Operations: Allows for efficient reading and writing of data in small page sizes.
• Block Erase Operations: Enables erasing a large block of data at once, improving efficiency.
• Wear-Leveling Algorithm: Distributes data evenly across memory cells to prevent premature wear-out.
• Error Correction Code (ECC): Implements ECC algorithms to ensure data integrity and reliability.
• Bad Block Management: Automatically detects and manages bad blocks to maintain optimal performance.

Advantages

• High storage capacity for storing large amounts of data.
• Fast data transfer rate for quick access to stored information.
• Reliable performance with NAND flash memory technology.
• Compact package suitable for space-constrained applications.
• Low power consumption for energy-efficient operation.

Disadvantages

• Limited lifespan due to a finite number of erase/program cycles.
• Susceptible to data corruption if not properly managed or protected.
• Higher cost compared to other types of non-volatile memory.

Working Principles

MT29F4G08ABAEAWP:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. Data is read from and written to these cells using specific voltage levels and programming algorithms.

Application Field Plans

MT29F4G08ABAEAWP:E TR finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

For alternative models with similar specifications and functionality, please refer to the manufacturer's product lineup or consult their official website. Some potential alternatives may include: - MT29F4G08ABBEAH4:E TR - MT29F4G08ABBEAWP:E TR - MT29F4G08ABBEAH4-IT:E TR

Please note that the availability and suitability of alternative models may vary based on specific requirements and compatibility considerations.

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