MT29F4G08ABADAWP-IT:D

Product Overview

Category

MT29F4G08ABADAWP-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABADAWP-IT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABADAWP-IT:D is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Storage Capacity: 4 gigabits (4 Gb)
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F4G08ABADAWP-IT:D has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE/WE: Read/Write control
7. R/B: Ready/Busy status
8. DQ0-DQ7: Data input/output lines

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency.
• Random Access: Provides direct access to any memory location for read or write operations.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data transfer.
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited erase/write cycles may affect the lifespan of the memory.
• Higher cost compared to other types of non-volatile memory.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT29F4G08ABADAWP-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory controller applies specific voltages to the appropriate cells, altering their electrical state. Reading data involves measuring the voltage levels within the cells to determine the stored information.

Detailed Application Field Plans

The MT29F4G08ABADAWP-IT:D finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F4G08ABADAWP-IT:D include: - Samsung K9K8G08U0D - Toshiba TH58NVG7D2FLA89 - Micron MT29F4G16ABADAWP

These models offer similar storage capacities and functionalities, providing alternatives for different design requirements.

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