MT29F4G08AACHC:C

Product Overview

Category

MT29F4G08AACHC:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08AACHC:C offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Compact package: The MT29F4G08AACHC:C is available in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It consumes minimal power, contributing to energy efficiency in portable devices.

Package and Quantity

The MT29F4G08AACHC:C is typically packaged in a surface-mount package, such as a ball grid array (BGA) or a thin small outline package (TSOP). The specific packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Endurance: Up to 100,000 program/erase cycles
• Cell Type: Multi-Level Cell (MLC)

Pin Configuration

The detailed pin configuration of MT29F4G08AACHC:C is as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/Busy status
8. DQ0-DQ7: Data input/output lines
9. NC: No connection (reserved pin)
10. GND: Ground

Note: The actual pin configuration may vary depending on the package type.

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, improving efficiency.
• Random Access: Provides random access to any memory location for read and write operations.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Compact form factor
• Low power consumption
• Reliable performance

Disadvantages

• Limited endurance compared to other types of non-volatile memory
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F4G08AACHC:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory controller applies specific voltages to the appropriate cells, altering their electrical state. Reading data involves detecting these voltage levels and converting them back into digital information.

Application Field Plans

The MT29F4G08AACHC:C NAND flash memory finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Solid-state drives (SSDs) 4. Portable media players 5. Automotive infotainment systems 6. Industrial control systems

Alternative Models

Several alternative models of NAND flash memory with similar specifications and features are available in the market. Some notable alternatives to MT29F4G08AACHC:C include: - Samsung K9K8G08U0D - Toshiba TH58NVG7D2FLA89 - Micron MT29F4G08ABADA

These alternative models can be considered based on specific requirements, availability, and compatibility with the target device.

In conclusion, MT29F4G08AACHC:C is a NAND flash memory product that offers high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and is available in different package options. While it has limitations in terms of endurance and cost, it remains a popular choice for data storage in modern electronic devices.