MT29F2G08ABAEAWP-ITX:E

Product Overview

Category

MT29F2G08ABAEAWP-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABAEAWP-ITX:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

MT29F2G08ABAEAWP-ITX:E is packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 2 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F2G08ABAEAWP-ITX:E can be found in the datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program: Allows data to be written into the memory cells in page-level increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the product's lifespan.
• Error Correction Code (ECC): Provides error detection and correction capabilities, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer rate enhances device performance.
• Low power consumption prolongs battery life.
• Compact package enables easy integration into various devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to some alternative storage solutions.

Working Principles

MT29F2G08ABAEAWP-ITX:E utilizes NAND flash memory technology. It stores data by trapping electric charges within memory cells, which are organized in a grid-like structure. The presence or absence of charges represents binary information (0s and 1s). Data can be written, read, and erased electronically using specific voltage levels and control signals.

Detailed Application Field Plans

MT29F2G08ABAEAWP-ITX:E finds application in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Industrial equipment for data logging and firmware storage.

Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to MT29F2G08ABAEAWP-ITX:E include: - MT29F2G08ABBEAH4-ITX - K9K8G08U0D-SCB0 - S34ML02G200TFI000

These alternative models can be considered based on specific requirements and compatibility with the target application.

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