MT29F2G01AAAEDH4-IT:E

Product Overview

Category

MT29F2G01AAAEDH4-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G01AAAEDH4-IT:E offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND Flash Memory provides high-speed data transfer, enabling efficient read and write operations.
• Reliable performance: The product ensures reliable performance with its built-in error correction codes (ECC) that detect and correct data errors.
• Low power consumption: The MT29F2G01AAAEDH4-IT:E is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F2G01AAAEDH4-IT:E is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 gigabytes (GB)
• Interface: NAND Flash interface
• Supply Voltage: 3.3 volts (V)
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Package Type: Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The MT29F2G01AAAEDH4-IT:E follows a standard pin configuration for NAND Flash Memory. The pinout diagram is as follows:

Pin 1: VCC Pin 2: ALE (Address Latch Enable) Pin 3: CLE (Command Latch Enable) Pin 4: CE (Chip Enable) Pin 5: RE (Read Enable) Pin 6: WE (Write Enable) Pin 7: R/B (Ready/Busy) Pin 8: NC (No Connection) Pin 9: DQ0 (Data Input/Output 0) Pin 10: DQ1 (Data Input/Output 1) ... Pin n: DQn (Data Input/Output n)

Functional Features

• Page Program Operation: The MT29F2G01AAAEDH4-IT:E supports page program operations, allowing for efficient data programming.
• Block Erase Operation: It enables block erase operations, which facilitate the erasure of multiple memory blocks simultaneously.
• Random Access: This NAND Flash Memory allows random access to individual memory cells, enabling quick retrieval of data.
• Wear-Leveling Algorithm: The product incorporates a wear-leveling algorithm that evenly distributes write and erase cycles across memory blocks, enhancing the overall lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity for ample data storage needs.
• Fast data transfer rate for efficient read and write operations.
• Reliable performance with built-in error correction codes.
• Low power consumption, suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.

Disadvantages

• Limited endurance: Like all NAND Flash Memory, the MT29F2G01AAAEDH4-IT:E has a limited number of write and erase cycles before it may become unreliable.
• Susceptible to data corruption: Improper handling or power interruptions during write operations can lead to data corruption.

Working Principles

The MT29F2G01AAAEDH4-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor.

During write operations, the memory cells are programmed by applying voltage to the control gates and storing an electrical charge in the floating gate. Erase operations involve removing the stored charge from the floating gate, effectively resetting the memory cell.

When reading data, the control gates are used to determine the charge level in each memory cell, representing the stored data. The MT29F2G01AAAEDH4-IT:E employs various algorithms and error correction techniques to ensure accurate data retrieval.

Detailed Application Field Plans

The MT29F2G01AAAEDH4-IT:E finds extensive application in the following fields:

1. Mobile Devices: It is widely used in smartphones and tablets for data storage, enabling users to store apps, photos, videos, and other multimedia content.
2. Digital Cameras: The product provides high-capacity storage for capturing and storing high-resolution images and videos.
3. Solid-State Drives (SSDs