MT29F1G16ABCHC-ET:C TR

Product Overview

Category

The MT29F1G16ABCHC-ET:C TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABCHC-ET:C TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F1G16ABCHC-ET:C TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental safety.

Package and Quantity

The MT29F1G16ABCHC-ET:C TR is available in a surface-mount package. It is typically supplied in reels, with each reel containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29F1G16ABCHC-ET:C TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F1G16ABCHC-ET:C TR allows data to be programmed in page mode, enabling efficient and fast programming.
• Block Erase Operation: It supports block erase operation, allowing for the erasure of multiple memory blocks simultaneously.
• Random Access: This NAND flash memory provides random access to data, enabling quick retrieval and modification of stored information.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor
• RoHS compliant

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan in certain applications.
• Relatively higher cost per gigabit compared to other storage technologies.

Working Principles

The MT29F1G16ABCHC-ET:C TR utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors within the memory cells. The presence or absence of trapped electrons determines the binary state (0 or 1) of each memory cell. Data can be written to and read from these memory cells using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F1G16ABCHC-ET:C TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing high-resolution photos and videos.
3. Solid-state drives (SSDs): Employed as primary storage in computers and laptops, offering faster boot times and improved