Micron Technology Inc.
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MT29F1G16ABBEAHC-IT:E TR

MT29F1G16ABBEAHC-IT:E TR

Product Overview

Category

The MT29F1G16ABBEAHC-IT:E TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F1G16ABBEAHC-IT:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
  • Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
  • Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
  • Low power consumption: The MT29F1G16ABBEAHC-IT:E TR is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G16ABBEAHC-IT:E TR is typically packaged in tape and reel format, ensuring convenient handling during manufacturing processes. It is available in quantities suitable for both small-scale and large-scale production.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 1 Gb
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)
  • Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F1G16ABBEAHC-IT:E TR is as follows:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Program Operation: The MT29F1G16ABBEAHC-IT:E TR supports fast and efficient page program operations, allowing for quick data storage.
  • Block Erase Operation: It enables the erasure of entire blocks of data, facilitating efficient memory management.
  • Read Operation: The product offers high-speed read operations, ensuring quick access to stored data.
  • Error Correction: Advanced error correction techniques are implemented to enhance data integrity and reliability.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast data transfer rate ensures quick read and write operations.
  • Reliable performance with advanced error correction techniques.
  • Low power consumption makes it suitable for battery-powered devices.
  • Compact package enables easy integration into various electronic devices.

Disadvantages

  • Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F1G16ABBEAHC-IT:E TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where data is stored in individual transistors. These transistors are organized into blocks, pages, and sectors, allowing for efficient read, write, and erase operations.

Detailed Application Field Plans

The MT29F1G16ABBEAHC-IT:E TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

  1. Smartphones and tablets: The product can be used to store operating systems, applications, and user data in mobile devices.
  2. Digital cameras: It enables the storage of high-resolution photos and videos captured by digital cameras.
  3. Solid-state drives (SSDs): The MT29F1G16ABBEAHC-IT:E TR can be integrated into SSDs to provide fast and reliable storage for computers and servers.

Detailed and Complete Alternative Models

  1. MT29F1G08ABAEAWP-IT:E TR
  2. MT29F1G08ABADAWP-IT:E TR
  3. MT29F1G08

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT29F1G16ABBEAHC-IT:E TR i tekniska lösningar

1. What is the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the capacity of the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR has a capacity of 1 gigabit (Gb), which is equivalent to 128 megabytes (MB).

3. What is the interface of the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR uses a standard 8-bit parallel interface for data transfer.

4. What is the operating voltage range of the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR operates at a voltage range of 2.7V to 3.6V.

5. What is the maximum clock frequency supported by the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR supports a maximum clock frequency of 50 MHz.

6. Is the MT29F1G16ABBEAHC-IT:E TR compatible with industrial temperature ranges? Yes, the MT29F1G16ABBEAHC-IT:E TR is designed to operate in industrial temperature ranges (-40°C to +85°C).

7. Does the MT29F1G16ABBEAHC-IT:E TR support hardware ECC (Error Correction Code)? Yes, the MT29F1G16ABBEAHC-IT:E TR supports hardware ECC to ensure data integrity and reliability.

8. Can the MT29F1G16ABBEAHC-IT:E TR be used in automotive applications? Yes, the MT29F1G16ABBEAHC-IT:E TR is suitable for use in automotive applications due to its industrial temperature range and robust design.

9. What is the typical endurance of the MT29F1G16ABBEAHC-IT:E TR? The MT29F1G16ABBEAHC-IT:E TR has a typical endurance of 100,000 program/erase cycles.

10. Is the MT29F1G16ABBEAHC-IT:E TR RoHS compliant? Yes, the MT29F1G16ABBEAHC-IT:E TR is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental regulations.