MT29F1G16ABBEAH4-ITX:E TR

Product Overview

Category

MT29F1G16ABBEAH4-ITX:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBEAH4-ITX:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures reliable data retention and endurance, making it suitable for long-term use.
• Compact package: The MT29F1G16ABBEAH4-ITX:E TR comes in a small form factor, enabling easy integration into various electronic devices.
• Low power consumption: This NAND flash memory consumes minimal power, contributing to energy efficiency.

Package and Quantity

The MT29F1G16ABBEAH4-ITX:E TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F1G16ABBEAH4-ITX:E TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | A0-A16 | Address Inputs | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | WE# | Write Enable | | 7 | RE# | Read Enable | | 8-39 | DQ0-DQ31 | Data Input/Output | | 40 | R/B# | Ready/Busy Status | | 41 | WP# | Write Protect | | 42 | GND | Ground |

Functional Features

• Page Program: The MT29F1G16ABBEAH4-ITX:E TR supports page programming, allowing data to be written in small increments.
• Block Erase: This NAND flash memory enables block erase operations, facilitating efficient data management.
• Read and Write Operations: The product offers fast read and write speeds, ensuring quick access to stored data.
• Error Correction Code (ECC): ECC functionality is integrated into the device, enhancing data integrity and reliability.
• Wear Leveling: The MT29F1G16ABBEAH4-ITX:E TR incorporates wear-leveling algorithms to distribute data evenly across memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and endurance.
• Compact package enables easy integration into various electronic devices.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Limited compatibility with certain legacy systems that do not support NAND flash memory.
• Higher cost compared to other types of memory technologies.

Working Principles

The MT29F1G16ABBEAH4-ITX:E TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells are made up of floating-gate transistors that can retain charge even when the power is turned off. To write data, an electrical charge is applied to the appropriate memory cells, altering their state. Reading data involves detecting the voltage levels of the memory cells to determine the stored information.

Detailed Application Field Plans

The MT29F1G16ABBEAH4-ITX:E TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Below are some alternative models that offer similar functionality to the MT29F1G16ABBEAH4-ITX:E TR:

1. MT29F1G08ABADAWP-ITX
2. MT29F1G16ABAEAWP-IT