MT29F1G16ABBDAH4-IT:D

Product Overview

Category

MT29F1G16ABBDAH4-IT:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBDAH4-IT:D offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F1G16ABBDAH4-IT:D is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact form factor, making it suitable for integration into small-sized electronic devices.
• Robust packaging: The product is packaged in a durable casing that protects it from physical damage and environmental factors.

Specifications

• Model: MT29F1G16ABBDAH4-IT:D
• Storage Capacity: 1 Gb
• Interface: NAND
• Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA (Ball Grid Array)
• Package Dimensions: 14mm x 18mm
• RoHS Compliance: Yes

Pin Configuration

The detailed pin configuration for MT29F1G16ABBDAH4-IT:D can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Program Operation: Allows data to be written into the memory cells in page units.
• Block Erase Operation: Enables erasing of data in block units, providing flexibility for data management.
• Read Operation: Facilitates the retrieval of stored data from the memory cells.
• Wear-Leveling Algorithm: Distributes write operations evenly across the memory cells, extending the product's lifespan.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.

Advantages

• High storage capacity allows for extensive data storage needs.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables integration into space-constrained electronic devices.
• Robust packaging ensures durability and protection against physical damage.

Disadvantages

• Limited compatibility with certain older devices that do not support NAND flash memory technology.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G16ABBDAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells consist of floating-gate transistors that can retain charge even when power is removed. The data is written by applying appropriate voltage levels to the memory cells, and it can be read by detecting the presence or absence of charge in the cells.

Detailed Application Field Plans

The MT29F1G16ABBDAH4-IT:D finds application in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. - Automotive electronics for storing firmware, maps, and multimedia content. - Industrial control systems for data logging and program storage.

Detailed and Complete Alternative Models

• MT29F512G08CMCABH6-IT: Offers a higher storage capacity of 512 gigabits (512 Gb) for applications requiring extensive data storage.
• MT29F2G08ABAEAWP-IT: Provides a lower storage capacity of 2 gigabits (2 Gb) for cost-sensitive applications with moderate storage requirements.
• MT29F4G16ABBDAH4-IT:D: Offers double the storage capacity of the MT29F1G16ABBDAH4-IT:D, providing 2 gigabits (2 Gb) of storage.

Please note that the above alternative models are just a few examples, and there are several other options available in the market.

Word count: 552 words