MT29F1G08ABAEAH4:E

Product Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
• Package: Integrated circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Manufacturer: Micron Technology Inc.
• Model Number: MT29F1G08ABAEAH4:E
• Memory Type: NAND Flash
• Density: 1 Gb (Gigabit)
• Organization: 128 M x 8 bits
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The MT29F1G08ABAEAH4:E chip has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. CE# - Chip enable input
4. CLE - Command latch enable input
5. ALE - Address latch enable input
6. RE# - Read enable input
7. WE# - Write enable input
8. WP# - Write protect input
9. R/B# - Ready/busy output
10. DQ0-DQ7 - Data input/output lines
11. NC - No connection (reserved)

(Note: The remaining pins continue in a similar pattern.)

Functional Features

• High-Speed Data Transfer: The MT29F1G08ABAEAH4:E chip offers fast read and write speeds, allowing for efficient data transfer.
• Reliable Storage: As a NAND flash memory chip, it provides non-volatile storage, ensuring data retention even when power is disconnected.
• Large Capacity: With a density of 1 Gb, this chip can store a significant amount of data.
• Wide Operating Temperature Range: It can operate reliably in a wide temperature range from -40°C to +85°C.

Advantages and Disadvantages

Advantages: - Fast read and write speeds - Non-volatile memory - High storage capacity - Wide operating temperature range

Disadvantages: - Limited pin count (48 pins) - Requires external circuitry for proper integration into electronic devices

Working Principles

The MT29F1G08ABAEAH4:E chip utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can hold multiple bits of information, allowing for high-density storage. To read or write data, the chip uses electrical signals to manipulate the charge levels within the memory cells.

Detailed Application Field Plans

The MT29F1G08ABAEAH4:E chip finds applications in various electronic devices that require data storage and retrieval capabilities. Some potential application fields include:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. MT29F1G08ABADAWP:A
2. MT29F1G08ABADAWP:B
3. MT29F1G08ABADAWP:C
4. MT29F1G08ABADAWP:D
5. MT29F1G08ABADAWP:F

(Note: The above list represents a few alternative models. There are more options available from the manufacturer.)

This entry provides an overview of the MT29F1G08ABAEAH4:E memory chip, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.