MT29F1G01AAADDH4-ITX:D TR

Product Overview

Category

MT29F1G01AAADDH4-ITX:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1G01AAADDH4-ITX:D TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

MT29F1G01AAADDH4-ITX:D TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)

Detailed Pin Configuration

The pin configuration of MT29F1G01AAADDH4-ITX:D TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Inputs/Outputs
8. R/B - Ready/Busy
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables the erasure of entire blocks of data.
• Random Access: Provides fast access to specific memory locations.
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast read and write speeds enable quick data transfer.
• Non-volatile memory retains data even when power is disconnected.
• Compact size facilitates integration into small electronic devices.
• Low power consumption prolongs battery life.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit compared to alternative memory technologies.

Working Principles

MT29F1G01AAADDH4-ITX:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of data, allowing for high storage density. Data is written to and read from the memory cells using electrical charges. The controller manages the operations and ensures data integrity through error correction techniques.

Detailed Application Field Plans

MT29F1G01AAADDH4-ITX:D TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Solid-state drives (SSDs)
4. Portable media players
5. Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1G01AAADDH4-ITX:D TR with similar specifications and functionality include:

1. MT29F1G08ABAEAWP-ITX:D TR
2. MT29F1G16ABBDAH4-ITX:D TR
3. MT29F1G32ABBDAH4-ITX:D TR

These alternative models offer different storage capacities and package options, allowing for flexibility in design and application.

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