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MT29F128G08AKCABH2-10ITZ:A
Product Overview
Category
The MT29F128G08AKCABH2-10ITZ:A belongs to the category of NAND Flash memory devices.
Use
It is used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High-speed data transfer
- Non-volatile memory
- Large storage capacity
- Low power consumption
Package
The MT29F128G08AKCABH2-10ITZ:A is typically available in a small form factor package suitable for surface mount technology (SMT) assembly.
Essence
The essence of this product lies in its ability to provide reliable and high-density data storage for a wide range of electronic applications.
Packaging/Quantity
It is commonly packaged in tape and reel format with varying quantities based on customer requirements.
Specifications
- Memory Capacity: 128 gigabits (16 gigabytes)
- Voltage: 2.7V - 3.6V
- Operating Temperature: -40°C to 85°C
- Interface: Toggle 2.0 Interface
- Page Size: 8,192 bytes
- Block Size: 512 pages per block
Detailed Pin Configuration
The detailed pin configuration for the MT29F128G08AKCABH2-10ITZ:A is as follows: 1. VCC 2. CE# 3. CLE 4. ALE 5. RE# 6. WE# 7. R/B# 8. NC 9. DQ0 10. DQ1 11. DQ2 12. DQ3 13. DQ4 14. DQ5 15. DQ6 16. DQ7 17. DQS 18. DQS# 19. NC 20. NC
Functional Features
- Error Correction: Built-in error correction codes (ECC) for data integrity
- Wear Leveling: Efficient wear leveling algorithms to extend the lifespan of the memory cells
- Bad Block Management: Automatic bad block management for enhanced reliability
- Read and Program Retry: Capabilities for reliable data read and program operations
Advantages and Disadvantages
Advantages
- High-speed data transfer rates
- Large storage capacity
- Low power consumption
- Reliable data integrity features
Disadvantages
- Higher cost compared to traditional hard disk drives
- Limited program/erase cycles
Working Principles
The MT29F128G08AKCABH2-10ITZ:A operates on the principles of NAND flash memory technology, utilizing floating gate transistors to store data in a non-volatile manner. When data is written or erased, charges are trapped in the floating gate, altering the transistor's conductive properties.
Detailed Application Field Plans
The MT29F128G08AKCABH2-10ITZ:A is widely used in the following application fields: - Mobile devices - Solid-state drives (SSDs) - Digital cameras - Industrial control systems - Automotive infotainment systems
Detailed and Complete Alternative Models
Some alternative models to the MT29F128G08AKCABH2-10ITZ:A include: - Samsung K9K8G08U0M - Micron MT29F128G08CFABBWP - Toshiba TH58NVG7D2FLA89
In conclusion, the MT29F128G08AKCABH2-10ITZ:A offers high-performance NAND flash memory capabilities suitable for a wide range of electronic applications, despite its limitations in cost and program/erase cycles. Its functional features and specifications make it a reliable choice for data storage needs in modern electronic devices.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT29F128G08AKCABH2-10ITZ:A i tekniska lösningar
What is the MT29F128G08AKCABH2-10ITZ:A?
- The MT29F128G08AKCABH2-10ITZ:A is a NAND flash memory device commonly used in embedded systems and other technical solutions.
What are the key features of the MT29F128G08AKCABH2-10ITZ:A?
- The MT29F128G08AKCABH2-10ITZ:A features a capacity of 128 gigabits, operates at a voltage of 3.3V, and offers high-speed data transfer rates.
In what applications can the MT29F128G08AKCABH2-10ITZ:A be used?
- This NAND flash memory device is commonly used in automotive, industrial, and consumer electronics applications, as well as in networking and telecommunications equipment.
What are the typical operating conditions for the MT29F128G08AKCABH2-10ITZ:A?
- The MT29F128G08AKCABH2-10ITZ:A operates within a temperature range of -40°C to 85°C and requires a supply voltage of 3.3V.
How does the MT29F128G08AKCABH2-10ITZ:A interface with microcontrollers or processors?
- The MT29F128G08AKCABH2-10ITZ:A typically uses a standard NAND flash interface, which allows it to connect to various microcontrollers and processors.
What are the endurance and retention characteristics of the MT29F128G08AKCABH2-10ITZ:A?
- This device offers high endurance and reliable data retention, making it suitable for demanding applications that require frequent read/write operations.
Does the MT29F128G08AKCABH2-10ITZ:A support error correction and wear leveling?
- Yes, this NAND flash memory device typically supports built-in error correction and wear-leveling algorithms to ensure data integrity and extend its lifespan.
Are there any specific design considerations when integrating the MT29F128G08AKCABH2-10ITZ:A into a technical solution?
- Designers should consider factors such as signal integrity, power supply stability, and proper handling of NAND-specific operations like block erasing and programming.
What are the available tools and resources for working with the MT29F128G08AKCABH2-10ITZ:A?
- Manufacturers often provide datasheets, application notes, and development tools to assist engineers in integrating and utilizing the MT29F128G08AKCABH2-10ITZ:A in their designs.
Where can I purchase the MT29F128G08AKCABH2-10ITZ:A for my technical project?
- The MT29F128G08AKCABH2-10ITZ:A can be sourced from authorized distributors or directly from the manufacturer's website. It's important to ensure authenticity and quality when purchasing electronic components.