MT28FW01GABA1HJS-0AAT TR

Product Overview

Category

MT28FW01GABA1HJS-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT28FW01GABA1HJS-0AAT TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Reliable: This memory device has high endurance and can withstand multiple read/write cycles without data corruption.
• Low power consumption: The MT28FW01GABA1HJS-0AAT TR is designed to consume minimal power, making it suitable for battery-powered devices.

Package and Quantity

The MT28FW01GABA1HJS-0AAT TR is available in a compact surface-mount package. Each package contains one memory device.

Specifications

• Storage Capacity: 1 Gb
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Package Type: SOP (Small Outline Package)

Pin Configuration

The MT28FW01GABA1HJS-0AAT TR has a total of 8 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | CS | Chip Select | | 2 | SO | Serial Data Output | | 3 | WP | Write Protect | | 4 | GND | Ground | | 5 | SI | Serial Data Input | | 6 | SCK | Serial Clock | | 7 | VCC | Power Supply | | 8 | HOLD | Hold Input |

Functional Features

• High-speed data transfer: The MT28FW01GABA1HJS-0AAT TR supports a fast serial interface, enabling quick and efficient data transfer.
• Flexible write protection: The WP pin allows users to protect the stored data from accidental modification or erasure.
• Low power consumption: This memory device is designed to operate with minimal power consumption, extending the battery life of portable devices.

Advantages

• Large storage capacity: With 1 Gb of storage space, the MT28FW01GABA1HJS-0AAT TR can accommodate a significant amount of data.
• Fast access time: The high-speed interface ensures quick read and write operations, enhancing overall system performance.
• Reliable data retention: The non-volatile nature of this memory device ensures that data remains intact even during power loss or device shutdown.

Disadvantages

• Limited compatibility: The MT28FW01GABA1HJS-0AAT TR uses the SPI interface, which may not be compatible with all devices.
• Relatively small package size: The compact SOP package limits the number of pins available for additional functionalities.

Working Principles

The MT28FW01GABA1HJS-0AAT TR utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage elements to retain information even without power supply. The SPI interface facilitates communication between the memory device and the host device, allowing for seamless data transfer.

Application Field Plans

The MT28FW01GABA1HJS-0AAT TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Alternative Models

• MT28FW01GABA1HJS-0AAT
• MT28FW01GABA1HJS-0AAU
• MT28FW01GABA1HJS-0AAM

These alternative models offer similar specifications and functionality to the MT28FW01GABA1HJS-0AAT TR.

In conclusion, the MT28FW01GABA1HJS-0AAT TR is a non-volatile memory device with a storage capacity of 1 Gb. It is commonly used in various electronic devices for data storage. With its fast access time, high reliability, and low power consumption, it offers several advantages. However, it has limited compatibility and a relatively small package size. The working principle involves flash memory technology and the use of an SPI interface. Its application field includes smartphones, digital cameras, and industrial control systems. Alternative models are