MT28F400B5WG-8 BET TR

Product Overview

Category

MT28F400B5WG-8 BET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F400B5WG-8 BET TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT28F400B5WG-8 BET TR is typically packaged in trays or reels, with each package containing a specific quantity of flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4GB (Gigabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 70ns (nanoseconds)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT28F400B5WG-8 BET TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data inputs/outputs
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RY/BY# - Ready/busy status
9. WP#/ACC - Write protect/acceleration
10. RE# - Reset

Functional Features

• High-speed data transfer
• Block erase and program operations
• Error correction code (ECC) for data integrity
• Wear-leveling algorithm to extend lifespan
• Bad block management

Advantages and Disadvantages

Advantages

• Fast read and write speeds
• Low power consumption
• Compact size for easy integration
• Reliable data storage
• Suitable for a wide range of electronic devices

Disadvantages

• Limited capacity compared to other storage options
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

MT28F400B5WG-8 BET TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying voltages to specific pins, enabling the electrical charges to be stored or retrieved.

Detailed Application Field Plans

MT28F400B5WG-8 BET TR finds applications in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP-IT: 4GB NAND Flash Memory, TSOP package, parallel interface.
2. S34ML04G200TFI000: 4GB NAND Flash Memory, BGA package, parallel interface.
3. IS37SML01G1: 4GB NAND Flash Memory, WSON package, parallel interface.

These alternative models offer similar specifications and functionality to MT28F400B5WG-8 BET TR, providing options for different design requirements.

In conclusion, MT28F400B5WG-8 BET TR is a high-performance flash memory chip that offers fast and reliable data storage for various electronic devices. Its compact size, low power consumption, and durability make it an ideal choice for applications requiring non-volatile memory. While it has limitations in terms of capacity and cost, alternative models are available to suit different project needs.