Micron Technology Inc.
Bild kan vara representation.
Se specifikationer för produktinformation.
MT28F128J3BS-12 ET TR
Visa detalj Datablad

MT28F128J3BS-12 ET TR

Product Overview

Category

MT28F128J3BS-12 ET TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as smartphones, tablets, digital cameras, and other portable devices.

Characteristics

  • High storage capacity: The MT28F128J3BS-12 ET TR offers a storage capacity of 128GB, allowing users to store a large amount of data.
  • Fast data transfer rate: With a high-speed interface, this flash memory chip enables quick data transfer between the device and the memory.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and security.
  • Low power consumption: The MT28F128J3BS-12 ET TR is energy-efficient, consuming minimal power during operation.
  • Compact package: This flash memory chip comes in a compact package, making it suitable for integration into various electronic devices.

Packaging/Quantity

The MT28F128J3BS-12 ET TR is typically packaged in a small form factor, such as a surface-mount package (SMP). It is available in bulk quantities for manufacturers and distributors.

Specifications

  • Model: MT28F128J3BS-12 ET TR
  • Storage Capacity: 128GB
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package Type: Surface-Mount Package (SMP)
  • Data Transfer Rate: Up to 100MB/s (Read), Up to 50MB/s (Write)

Detailed Pin Configuration

The MT28F128J3BS-12 ET TR has a specific pin configuration that allows for proper connection and communication with the host device. The detailed pin configuration is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. WE: Write Enable
  5. RE: Read Enable
  6. A0-A18: Address Inputs
  7. DQ0-DQ15: Data Input/Output
  8. RY/BY#: Ready/Busy Output
  9. WP#: Write Protect
  10. CLE: Command Latch Enable
  11. ALE: Address Latch Enable

Functional Features

  • High-speed data transfer: The MT28F128J3BS-12 ET TR offers fast read and write speeds, allowing for efficient data access and storage.
  • Error correction: This flash memory chip incorporates error correction techniques to ensure data integrity and reliability.
  • Wear-leveling algorithm: The product utilizes a wear-leveling algorithm to distribute data evenly across memory cells, extending the lifespan of the chip.
  • Bad block management: The MT28F128J3BS-12 ET TR includes a bad block management system that identifies and manages defective blocks, preventing data loss.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Relatively high cost compared to lower-capacity flash memory chips
  • Limited compatibility with older devices due to interface requirements

Working Principles

The MT28F128J3BS-12 ET TR operates based on NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. When data is written, electrical charges are stored in the memory cells, representing binary information. During read operations, these charges are detected and converted back into digital data.

Detailed Application Field Plans

The MT28F128J3BS-12 ET TR is widely used in various electronic devices that require high-capacity data storage. Some of the key application fields include:

  1. Smartphones and tablets: The flash memory chip provides ample storage for apps, media files, and user data.
  2. Digital cameras: It allows for storing a large number of high-resolution photos and videos.
  3. Portable gaming consoles: The product enables game developers to create immersive gaming experiences with extensive data storage capabilities.
  4. Industrial control systems: The flash memory chip is suitable for storing critical data in industrial automation and control applications.

Detailed and Complete Alternative Models

  • MT28F128J3BS-12 ET TR (128GB)
  • MT28F64J3BS-12 ET TR (64GB)
  • MT28F32J3BS-12 ET TR (32GB)
  • MT28F16J3BS-12 ET TR (16GB)

These alternative models offer varying storage capacities to cater to different requirements and budgets.

Word count: 570 words

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT28F128J3BS-12 ET TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of MT28F128J3BS-12 ET TR in technical solutions:

  1. Q: What is the capacity of the MT28F128J3BS-12 ET TR? A: The MT28F128J3BS-12 ET TR has a capacity of 128 megabits (16 megabytes).

  2. Q: What is the operating voltage range for this memory device? A: The operating voltage range for the MT28F128J3BS-12 ET TR is typically between 2.7V and 3.6V.

  3. Q: Can I use this memory device in industrial applications? A: Yes, the MT28F128J3BS-12 ET TR is suitable for industrial applications due to its extended temperature range (-40°C to +85°C) and high reliability.

  4. Q: Does this memory device support synchronous or asynchronous operation? A: The MT28F128J3BS-12 ET TR supports asynchronous operation.

  5. Q: What is the access time of this memory device? A: The access time of the MT28F128J3BS-12 ET TR is 120 nanoseconds (ns).

  6. Q: Can I use this memory device in automotive applications? A: Yes, the MT28F128J3BS-12 ET TR is designed to meet the requirements of automotive applications, including AEC-Q100 qualification.

  7. Q: Does this memory device have built-in error correction capabilities? A: No, the MT28F128J3BS-12 ET TR does not have built-in error correction capabilities. External error correction techniques may be required.

  8. Q: What is the package type of this memory device? A: The MT28F128J3BS-12 ET TR is available in a 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package.

  9. Q: Can I use this memory device in battery-powered devices? A: Yes, the MT28F128J3BS-12 ET TR is designed to be power-efficient and can be used in battery-powered devices.

  10. Q: Is this memory device compatible with standard microcontrollers? A: Yes, the MT28F128J3BS-12 ET TR is compatible with standard microcontrollers that support asynchronous memory interfaces.

Please note that these answers are based on general information about the MT28F128J3BS-12 ET TR and may vary depending on specific application requirements.