The M58WR064KB7AZB6E chip has the following pin configuration:
Advantages: - Large storage capacity - Fast access times - Low power consumption - Error correction capability - Sector protection for data security
Disadvantages: - Limited erase/program cycles - Relatively high cost compared to other memory technologies
The M58WR064KB7AZB6E is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve digital information. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. This change can be detected during read operations, allowing the stored data to be retrieved.
The M58WR064KB7AZB6E chip finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Telecommunications - Medical devices
Other alternative models with similar specifications and features include: - M58WR032KB7AZB6E - M58WR128EB7AZB6E - M58WR256GB7AZB6E
These alternative models provide options for different storage capacities and may suit specific application requirements.
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Sure! Here are 10 common questions and answers related to the application of M58WR064KB7AZB6E in technical solutions:
Q: What is M58WR064KB7AZB6E? A: M58WR064KB7AZB6E is a specific model of memory chip manufactured by a company called Micron Technology.
Q: What is the capacity of M58WR064KB7AZB6E? A: The capacity of M58WR064KB7AZB6E is 64 megabits (Mb), which is equivalent to 8 megabytes (MB).
Q: What is the interface type supported by M58WR064KB7AZB6E? A: M58WR064KB7AZB6E supports a parallel interface, specifically the asynchronous SRAM interface.
Q: What is the operating voltage range for M58WR064KB7AZB6E? A: The operating voltage range for M58WR064KB7AZB6E is typically between 2.7V and 3.6V.
Q: What is the access time of M58WR064KB7AZB6E? A: The access time of M58WR064KB7AZB6E is specified as 55 nanoseconds (ns).
Q: Can M58WR064KB7AZB6E be used in automotive applications? A: Yes, M58WR064KB7AZB6E is designed to meet the requirements of automotive applications, including extended temperature ranges.
Q: Is M58WR064KB7AZB6E compatible with other memory chips? A: M58WR064KB7AZB6E follows industry-standard pinout and functionality, making it compatible with other similar memory chips.
Q: Can M58WR064KB7AZB6E be used in battery-powered devices? A: Yes, M58WR064KB7AZB6E has low power consumption characteristics, making it suitable for battery-powered devices.
Q: What is the package type of M58WR064KB7AZB6E? A: M58WR064KB7AZB6E is available in a 48-ball FBGA (Fine-Pitch Ball Grid Array) package.
Q: Are there any specific application notes or guidelines available for using M58WR064KB7AZB6E? A: Yes, Micron Technology provides detailed application notes and guidelines that can help users integrate M58WR064KB7AZB6E into their technical solutions effectively.
Please note that the answers provided here are general and may vary depending on the specific requirements and documentation provided by Micron Technology for M58WR064KB7AZB6E.