M29W400FB5AN6F TR

Product Overview

Category

M29W400FB5AN6F TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Compact size: Enables integration into small electronic devices.
• Durable: Resistant to physical damage and can withstand harsh environmental conditions.

Package

M29W400FB5AN6F TR is available in a surface-mount package, making it suitable for automated assembly processes.

Essence

The essence of M29W400FB5AN6F TR lies in its ability to provide reliable and high-performance data storage in a compact form factor.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W400FB5AN6F TR chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/control signal
10. VSS: Ground

Functional Features

• Erase and Program Operations: M29W400FB5AN6F TR supports sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
• Automatic Sleep Mode: Reduces power consumption when the device is idle for an extended period.
• Error Correction Code (ECC): Built-in ECC ensures data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High-speed read and write operations enable quick data access.
• Compact size allows for integration into small electronic devices.
• Durable design ensures reliability in various environments.
• Block locking feature provides data security.

Disadvantages

• Limited storage capacity compared to higher-capacity flash memory options.
• Parallel interface may not be compatible with newer devices that utilize serial interfaces.

Working Principles

M29W400FB5AN6F TR utilizes a floating-gate transistor technology called NOR flash memory. It stores data by trapping electrons in the floating gate, which alters the transistor's threshold voltage. This change in voltage determines whether the stored bit is interpreted as a "0" or a "1". During read operations, the stored charge is measured to retrieve the stored data.

Detailed Application Field Plans

M29W400FB5AN6F TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to M29W400FB5AN6F TR include: - M29W400FT5AN6F - M29W400FB5AN6E - M29W400FT5AN6E

These models offer similar specifications and functionality, providing options for different design requirements.

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