Micron Technology Inc.
Bild kan vara representation.
Se specifikationer för produktinformation.
M29W400DB55ZE6F TR
Visa detalj Datablad

M29W400DB55ZE6F TR

Product Overview

Category

M29W400DB55ZE6F TR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

  • Non-volatile memory: The data stored in M29W400DB55ZE6F TR is retained even when power is turned off.
  • High capacity: It has a storage capacity of 4 gigabits (512 megabytes).
  • Fast access time: The chip provides quick access to stored data, allowing for efficient retrieval and processing.
  • Reliable performance: M29W400DB55ZE6F TR offers high reliability and durability, ensuring data integrity over extended periods of use.

Package

M29W400DB55ZE6F TR is available in a compact package that facilitates easy integration into various electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of M29W400DB55ZE6F TR lies in its ability to store and retrieve large amounts of data reliably and quickly, making it an essential component in modern electronic devices.

Packaging/Quantity

The chip is typically sold in reels or trays, with each reel or tray containing a specific quantity of M29W400DB55ZE6F TR chips. The exact packaging and quantity may vary based on the supplier and customer requirements.

Specifications

  • Storage Capacity: 4 gigabits (512 megabytes)
  • Interface: Parallel or Serial
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Program Time: Varies depending on the operation mode and voltage supply

Detailed Pin Configuration

The pin configuration of M29W400DB55ZE6F TR may vary depending on the manufacturer. Please refer to the datasheet provided by the specific manufacturer for detailed pin configuration information.

Functional Features

  • Erase and Program Operations: M29W400DB55ZE6F TR supports both erase and program operations, allowing users to modify stored data as needed.
  • Block Architecture: The chip is organized into multiple blocks, enabling efficient erasure and programming of specific sections of memory.
  • Read Operation: It provides fast and reliable read access to stored data, facilitating seamless data retrieval for processing or display purposes.
  • Write Protection: M29W400DB55ZE6F TR includes write protection features to prevent accidental modification or deletion of stored data.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast access time
  • Reliable performance
  • Compact package size
  • Versatile interface options (parallel or serial)

Disadvantages

  • Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
  • Higher cost compared to other types of memory technologies.

Working Principles

M29W400DB55ZE6F TR utilizes a floating-gate transistor structure to store data. The memory cells within the chip can be electrically programmed and erased using specific voltage levels. When reading data, the stored charge in each memory cell is measured to determine the stored information.

Detailed Application Field Plans

M29W400DB55ZE6F TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

  • M29W400DB45N1E TR
  • M29W400DT70N1E TR
  • M29W400DT70N6E TR
  • M29W400DT70N6F TR
  • M29W400DT70N1F TR

These alternative models offer similar specifications and functionality to M29W400DB55ZE6F TR, providing users with options based on their specific requirements.

Note: The list of alternative models may vary depending on the manufacturer and availability.

Word count: 566 words

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av M29W400DB55ZE6F TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of M29W400DB55ZE6F TR in technical solutions:

  1. Q: What is the M29W400DB55ZE6F TR? A: The M29W400DB55ZE6F TR is a specific model of flash memory chip manufactured by a particular company.

  2. Q: What is the capacity of the M29W400DB55ZE6F TR? A: The M29W400DB55ZE6F TR has a capacity of 4 megabits (or 512 kilobytes).

  3. Q: What is the operating voltage range for the M29W400DB55ZE6F TR? A: The M29W400DB55ZE6F TR operates within a voltage range of 2.7V to 3.6V.

  4. Q: What is the maximum clock frequency supported by the M29W400DB55ZE6F TR? A: The M29W400DB55ZE6F TR supports a maximum clock frequency of 55 MHz.

  5. Q: What interface does the M29W400DB55ZE6F TR use? A: The M29W400DB55ZE6F TR uses a parallel interface.

  6. Q: Can the M29W400DB55ZE6F TR be used in automotive applications? A: Yes, the M29W400DB55ZE6F TR is suitable for automotive applications as it meets the required specifications.

  7. Q: Does the M29W400DB55ZE6F TR support hardware data protection? A: Yes, the M29W400DB55ZE6F TR provides hardware data protection features like write protection and block locking.

  8. Q: What is the typical access time of the M29W400DB55ZE6F TR? A: The typical access time of the M29W400DB55ZE6F TR is around 70 ns.

  9. Q: Can the M29W400DB55ZE6F TR be used in industrial control systems? A: Yes, the M29W400DB55ZE6F TR is suitable for industrial control systems due to its reliability and extended temperature range.

  10. Q: Is the M29W400DB55ZE6F TR compatible with other flash memory devices? A: Yes, the M29W400DB55ZE6F TR is compatible with other flash memory devices that use a similar interface and voltage range.

Please note that the answers provided here are general and may vary depending on specific requirements and application scenarios.