M29F400FT55M3T2 TR

Product Overview

Category

The M29F400FT55M3T2 TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F400FT55M3T2 TR retains stored data even when power is removed.
• High capacity: With a storage capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Reliable: It has a high endurance and can withstand numerous read and write cycles without data corruption.
• Low power consumption: The M29F400FT55M3T2 TR operates on low power, making it suitable for battery-powered devices.

Package

The M29F400FT55M3T2 TR is available in a surface-mount package, which allows for easy integration onto printed circuit boards (PCBs).

Essence

This memory device is designed to provide reliable and high-capacity data storage in electronic systems.

Packaging/Quantity

The M29F400FT55M3T2 TR is typically packaged in reels or trays, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 Megabits (512 Kilobytes)
• Access Time: 55 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 512K x 8 bits
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The M29F400FT55M3T2 TR has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control input
5. CE#: Chip enable control input
6. OE#: Output enable control input
7. RP#/BYTE#: Reset/byte enable control input
8. RE#: Ready/Busy output
9. WP#/ACC: Write protect/input control
10. VSS: Ground

Functional Features

• Fast Read and Write Operations: The M29F400FT55M3T2 TR offers quick access times for both reading and writing data, ensuring efficient data transfer.
• Erase and Program Operations: This memory device supports sector erase and byte program operations, allowing for flexible data manipulation.
• Hardware Data Protection: It features a write protection mechanism that prevents accidental modification of stored data.
• Ready/Busy Output: The RE# pin indicates the status of the device, signaling when it is ready for data transfer or busy with internal operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable and durable
• Low power consumption
• Easy integration onto PCBs

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies
• Requires additional circuitry for interfacing with microcontrollers or processors

Working Principles

The M29F400FT55M3T2 TR utilizes flash memory technology to store data. It consists of a grid of memory cells, each capable of storing a single bit of information. These cells are organized into sectors, which can be individually erased and programmed.

During a read operation, the device retrieves data by applying appropriate voltages to the memory cells and sensing the resulting electrical currents. Write operations involve applying specific voltage levels to program or erase the memory cells.

Detailed Application Field Plans

The M29F400FT55M3T2 TR is widely used in various applications, including:

1. Computers: Used for storing BIOS firmware, boot loaders, and other critical system data.
2. Smartphones: Provides storage for operating systems, applications, and user data.
3. Embedded Systems: Used in industrial control systems, automotive electronics, and IoT devices for data storage and firmware updates.

Detailed and Complete Alternative Models

1. M29F400FB5AN6E: Similar flash memory device with a different package and access time.
2. M29F400BB70N6E: Flash memory device with a higher access time but lower power consumption.
3. M29F400BT90N6E: Flash memory device with a higher access time but larger storage capacity.

These alternative models offer similar functionality and can be considered as alternatives to the M29F400FT55M3T2 TR based