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M29F400FB55N3F2 TR
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M29F400FB55N3F2 TR

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Non-volatile Memory
  • Characteristics: Flash Memory, 4 Megabit (512K x 8-bit), 5V Supply Voltage, 55ns Access Time
  • Package: TSSOP-48
  • Essence: High-density, low-power, non-volatile memory solution
  • Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

  • Memory Type: NOR Flash
  • Memory Size: 4 Megabit (512K x 8-bit)
  • Supply Voltage: 5V
  • Access Time: 55ns
  • Interface: Parallel
  • Organization: 512K words x 8 bits
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Program Suspend and Resume Modes
  • Sector Erase Architecture:
    • Boot Block (Top or Bottom) with Lockout
    • Parameter and Main Blocks
  • Low Power Consumption:
    • Standby Current: 50µA (typical)
    • Read Current: 15mA (typical)
    • Program/Erase Current: 30mA (typical)

Detailed Pin Configuration

The M29F400FB55N3F2 TR IC has a TSSOP-48 package with the following pin configuration:

  1. A16
  2. A14
  3. A12
  4. A7
  5. A6
  6. A5
  7. A4
  8. A3
  9. A2
  10. A1
  11. A0
  12. VPP
  13. DQ0
  14. DQ1
  15. DQ2
  16. DQ3
  17. DQ4
  18. DQ5
  19. DQ6
  20. DQ7
  21. VCC
  22. GND
  23. WE#
  24. CE#
  25. OE#
  26. BYTE#
  27. A8
  28. A9
  29. A11
  30. A13
  31. A15
  32. RP#
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • Non-volatile memory: Retains data even when power is removed
  • High-density storage: 4 Megabit capacity
  • Fast access time: 55ns for quick data retrieval
  • Low power consumption: Ideal for battery-powered devices
  • Erase/Program Suspend and Resume Modes: Allows interruption and resumption of erase or program operations
  • Sector Erase Architecture: Enables selective erasure of specific memory sectors
  • Boot Block with Lockout: Protects critical boot code from accidental modification
  • Parameter and Main Blocks: Provides flexibility in storing different types of data

Advantages and Disadvantages

Advantages: - High-density memory solution - Fast access time - Low power consumption - Flexible sector erase architecture - Protection of critical boot code

Disadvantages: - Limited storage capacity compared to higher-capacity flash memory options - Parallel interface may not be suitable for all applications

Working Principles

The M29F400FB55N3F2 TR is a NOR flash memory IC that stores data using a floating-gate transistor technology. It operates on a 5V supply voltage and communicates with the host system through a parallel interface. The memory can be read, programmed, and erased using specific control signals. The sector erase architecture allows selective erasure of memory sectors, while the boot block with lockout protects critical boot code from accidental modification.

Detailed Application Field Plans

The M29F400FB55N3F2 TR is commonly used in various electronic devices that require non-volatile memory for data storage. Some potential application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Communication devices

Detailed and Complete Alternative Models

  • M29F400FB55N1F2 TR
  • M29F400FB55N5F2 TR
  • M29F400FB55N6F2 TR
  • M29F400FB55N7F2 TR
  • M29F400FB55N8F2 TR

These alternative models offer similar specifications and functionality to the M29F400FB55N3F2 TR, providing options for different supply voltages, access times, or package types.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av M29F400FB55N3F2 TR i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of M29F400FB55N3F2 TR in technical solutions:

  1. Q: What is the M29F400FB55N3F2 TR? A: The M29F400FB55N3F2 TR is a specific model of flash memory chip manufactured by a company called STMicroelectronics.

  2. Q: What is the capacity of the M29F400FB55N3F2 TR? A: The M29F400FB55N3F2 TR has a capacity of 4 megabits (or 512 kilobytes) of non-volatile memory.

  3. Q: What is the operating voltage range for the M29F400FB55N3F2 TR? A: The M29F400FB55N3F2 TR operates within a voltage range of 2.7V to 3.6V.

  4. Q: What is the access time of the M29F400FB55N3F2 TR? A: The M29F400FB55N3F2 TR has an access time of 55 nanoseconds, meaning it takes 55 ns to read or write data.

  5. Q: Can the M29F400FB55N3F2 TR be used in automotive applications? A: Yes, the M29F400FB55N3F2 TR is designed to meet the requirements of automotive applications and can be used in such scenarios.

  6. Q: Does the M29F400FB55N3F2 TR support multiple programming modes? A: Yes, the M29F400FB55N3F2 TR supports both byte-wide and word-wide programming modes.

  7. Q: Is the M29F400FB55N3F2 TR compatible with standard microcontrollers? A: Yes, the M29F400FB55N3F2 TR is compatible with a wide range of microcontrollers and can be easily integrated into various systems.

  8. Q: What is the endurance rating of the M29F400FB55N3F2 TR? A: The M29F400FB55N3F2 TR has an endurance rating of 100,000 program/erase cycles, ensuring reliable and long-lasting performance.

  9. Q: Can the M29F400FB55N3F2 TR operate in harsh environmental conditions? A: Yes, the M29F400FB55N3F2 TR is designed to withstand a wide temperature range (-40°C to +85°C) and is suitable for use in rugged environments.

  10. Q: Are there any specific precautions to consider when using the M29F400FB55N3F2 TR? A: It is recommended to follow the manufacturer's guidelines regarding power supply sequencing, voltage levels, and timing requirements to ensure proper operation of the chip.

Please note that these answers are general and may vary depending on the specific application and requirements.