M29F400FB55M3T2 TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: Flash Memory, High Density, Low Power Consumption
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Reliable and Efficient Data Storage Solution
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles (minimum)

Detailed Pin Configuration

The M29F400FB55M3T2 TR has a total of 48 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. DQ0
13. DQ1
14. DQ2
15. DQ3
16. VSS (Ground)
17. DQ4
18. DQ5
19. DQ6
20. DQ7
21. WE# (Write Enable)
22. CE# (Chip Enable)
23. OE# (Output Enable)
24. BYTE#
25. VCC (Power Supply)
26. RESET#
27. NC (No Connection)
28. A15
29. A13
30. A11
31. A8
32. A9
33. A10
34. DQ15
35. DQ14
36. DQ13
37. DQ12
38. DQ11
39. DQ10
40. DQ9
41. DQ8
42. RP#
43. VPP (Programming Voltage)
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-density non-volatile memory for data storage
• Fast access time of 55 ns for efficient data retrieval
• Low power consumption for energy efficiency
• Reliable and durable flash memory technology
• Easy integration into various electronic devices

Advantages and Disadvantages

Advantages: - High storage capacity - Fast access time - Low power consumption - Reliable data retention - Easy integration

Disadvantages: - Limited erase/program cycles - Sensitive to high temperatures

Working Principles

The M29F400FB55M3T2 TR is based on NOR flash memory technology. It stores data using a grid of memory cells, where each cell represents a bit of information. The memory cells can be electrically programmed and erased, allowing for non-volatile data storage. The chip utilizes various control signals such as WE# (Write Enable), CE# (Chip Enable), and OE# (Output Enable) to manage read, write, and erase operations.

Detailed Application Field Plans

The M29F400FB55M3T2 TR is widely used in various electronic devices that require reliable and high-density non-volatile memory. Some common application fields include: - Consumer electronics (e.g., digital cameras, MP3 players) - Automotive systems (e.g., infotainment systems, engine control units) - Industrial equipment (e.g., automation systems, measurement devices) - Communication devices (e.g., routers, switches)

Detailed and Complete Alternative Models

• M29F400FB55M3T1 TR
• M29F400FB55M3T3 TR
• M29F400FB55M3T4 TR
• M29F400FB55M3T5 TR

These alternative models are similar to the M29F400FB55M3T2 TR in terms of specifications and functionality, but may have slight differences in package type or temperature range.

Word count: 346 words