M29F160FT55N3F2 TR

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: TSSOP (Thin Shrink Small Outline Package)
• Essence: Reliable and efficient flash memory solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Manufacturer: [Insert Manufacturer Name]
• Part Number: M29F160FT55N3F2 TR
• Memory Type: NOR Flash
• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Erase/Program Suspend: Yes
• Sector Architecture: Uniform 4 Kbyte sectors with chip erase capability
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The M29F160FT55N3F2 TR has a total of 48 pins. The pin configuration is as follows:

1. VPP (Programming Voltage)
2. A0-A19 (Address Inputs)
3. DQ0-DQ7 (Data Input/Output)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP# (Ready/Busy)
8. RESET# (Reset)
9. BYTE# (Byte/Word Organization Selection)
10. NC (No Connection)

(Note: The remaining pins are not listed for brevity)

Functional Features

• High-speed read and write operations
• Sector-based erase and chip erase capability
• Low power consumption in standby mode
• Automatic program and erase algorithms
• Hardware and software data protection mechanisms
• Built-in error correction code (ECC) for improved reliability

Advantages

• Large storage capacity for data-intensive applications
• Fast access times for efficient data retrieval
• Reliable and durable memory solution
• Low power consumption extends battery life in portable devices
• Versatile interface allows easy integration into various electronic systems

Disadvantages

• Higher cost compared to other types of memory
• Limited endurance compared to some newer memory technologies
• Requires additional circuitry for programming and erasing operations

Working Principles

The M29F160FT55N3F2 TR operates based on the principles of NOR flash memory technology. It utilizes a grid of memory cells, where each cell stores a binary value (0 or 1). The cells are organized into sectors, which can be individually erased or programmed. When data is written to the memory, the corresponding cells are programmed by applying a high voltage. Reading data involves detecting the voltage levels in the memory cells to determine the stored values.

Detailed Application Field Plans

The M29F160FT55N3F2 TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment) - Communication devices (e.g., routers, switches)

Detailed and Complete Alternative Models

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This concludes the encyclopedia entry for M29F160FT55N3F2 TR.