M25PX80-VMN3TPB TR

Product Overview

Category

The M25PX80-VMN3TPB TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M25PX80-VMN3TPB TR retains stored data even when power is removed.
• High capacity: This device offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The M25PX80-VMN3TPB TR provides quick read and write operations, ensuring efficient data transfer.
• Low power consumption: It is designed to consume minimal power during operation.
• Reliable: This memory device has a high endurance and can withstand multiple read/write cycles without data corruption.

Package and Quantity

The M25PX80-VMN3TPB TR is available in a compact surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 8 megabits (1 megabyte)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The M25PX80-VMN3TPB TR follows a standard pin configuration for SPI memory devices:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Ground (GND)
7. Power Supply (VCC)

Functional Features

• High-speed data transfer: The M25PX80-VMN3TPB TR supports fast read and write operations, enabling efficient data handling.
• Sector-based erase and program: It allows selective erasure and programming of specific memory sectors, reducing unnecessary data modification.
• Write protection: The /WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Software and hardware reset: This feature enables easy initialization and recovery of the device.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Flexible sector-based operations

Disadvantages

• Limited compatibility with certain devices that do not support SPI interface
• Relatively higher cost compared to other memory technologies

Working Principles

The M25PX80-VMN3TPB TR utilizes flash memory technology for data storage. It employs a floating-gate transistor structure to store and retrieve digital information. When data is written, electrons are trapped in the floating gate, altering the transistor's conductive properties. These trapped charges represent the stored data. During read operations, the transistor's conductance is measured to determine the stored value.

Detailed Application Field Plans

The M25PX80-VMN3TPB TR finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for data storage purposes.
2. Automotive: Employed in automotive infotainment systems, instrument clusters, and navigation systems.
3. Industrial Automation: Utilized in programmable logic controllers (PLCs), human-machine interfaces (HMIs), and industrial control systems.
4. Medical Devices: Integrated into medical equipment such as patient monitors, diagnostic devices, and imaging systems.
5. Internet of Things (IoT): Incorporated into IoT devices for storing sensor data, firmware updates, and configuration settings.

Detailed and Complete Alternative Models

1. M25P16-VMN6TPB: 16 megabit (2 megabyte) capacity, similar characteristics and package.
2. M25PX32-VMN6TPB: 32 megabit (4 megabyte) capacity, similar characteristics and package.
3. M25PX64-VMN6TPB: 64 megabit (8 megabyte) capacity, similar characteristics and package.

These alternative models offer different storage capacities while maintaining similar features and compatibility with the M25PX80-VMN3TPB TR.

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