JR28F064M29EWLB TR

Product Overview

Category

JR28F064M29EWLB TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Can store a significant amount of data.
• Compact size: Takes up minimal space in electronic devices.
• Durable: Resistant to physical damage and can withstand harsh environmental conditions.

Package

JR28F064M29EWLB TR is available in a small form factor package, designed to fit seamlessly into electronic devices. The package ensures protection against external factors such as moisture, dust, and electrostatic discharge.

Essence

The essence of JR28F064M29EWLB TR lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

JR28F064M29EWLB TR is typically packaged in reels or trays, depending on the quantity ordered. The exact packaging and quantity may vary based on customer requirements.

Specifications

• Storage Capacity: 64GB
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Data Transfer Rate: Up to 104MHz
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. CS: Chip select
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP: Write protect
8. HOLD: Hold input

Functional Features

• High-speed data transfer: Enables fast read and write operations.
• Error correction: Incorporates advanced error correction techniques to ensure data integrity.
• Wear leveling: Distributes data evenly across memory cells, extending the lifespan of the flash memory.
• Security features: Provides hardware-based encryption and secure erase capabilities to protect sensitive data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Compact size
• High-speed data transfer
• Durable and reliable
• Secure data storage

Disadvantages

• Limited erase/program cycles
• Relatively higher cost compared to other storage options

Working Principles

JR28F064M29EWLB TR utilizes NAND flash memory technology. It stores data by trapping electric charges in a grid of floating-gate transistors. When a voltage is applied, the trapped charges are read as binary data. The data can be erased and reprogrammed using specific electrical pulses.

Detailed Application Field Plans

JR28F064M29EWLB TR finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Solid-state drives (SSDs) 4. Portable media players 5. Automotive infotainment systems 6. Industrial control systems

Detailed and Complete Alternative Models

1. JR28F032M29EWLB TR - 32GB Flash Memory with similar specifications and features.
2. JR28F128M29EWLB TR - 128GB Flash Memory with higher storage capacity.
3. JR28F256M29EWLB TR - 256GB Flash Memory with even larger storage capacity.

These alternative models offer different storage capacities to cater to varying requirements.

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