PL133-27GC-R

Overview

Category: Electronic Component
Use: Power Amplifier
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: NPN Transistor
Packaging/Quantity: Bulk Packaging, 1000 pieces per box

Specifications and Parameters

• Collector Current (Ic): 500mA
• Collector-Emitter Voltage (Vceo): 30V
• Emitter-Base Voltage (Veb): 5V
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Pin Configuration

The PL133-27GC-R transistor has a TO-92 package with three pins. The pin configuration is as follows:

1. Pin 1: Emitter (E)
2. Pin 2: Base (B)
3. Pin 3: Collector (C)

Functional Characteristics

The PL133-27GC-R is an NPN transistor primarily used as a power amplifier. It exhibits high gain and low noise characteristics, making it suitable for various audio and RF applications. The transistor operates within a wide temperature range of -55°C to +150°C.

Advantages and Disadvantages

Advantages: - High gain amplification - Low noise output - Wide operating temperature range

Disadvantages: - Limited collector current capacity - Restricted voltage handling capability

Applicable Range of Products

The PL133-27GC-R transistor is commonly used in electronic devices that require power amplification, such as audio amplifiers, RF transmitters, and signal processing circuits.

Working Principles

The PL133-27GC-R operates based on the principles of bipolar junction transistors (BJTs). As an NPN transistor, it consists of three layers: the emitter, base, and collector. By applying a small current to the base-emitter junction, the transistor allows a larger current to flow between the collector and emitter, amplifying the input signal.

Detailed Application Field Plans

The PL133-27GC-R transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio amplifiers to boost the power of audio signals.
2. RF Transmitters: Employed in radio frequency transmitters for amplifying RF signals.
3. Signal Processing Circuits: Integrated into circuits that process and amplify electronic signals.

Detailed Alternative Models

Some alternative models similar to the PL133-27GC-R transistor include:

1. PL133-28GC-R
2. PL133-26GC-R
3. PL133-29GC-R
4. PL133-27BC-R
5. PL133-27GC-S

5 Common Technical Questions and Answers

1. Q: What is the maximum collector current of the PL133-27GC-R transistor? A: The maximum collector current is 500mA.

2. Q: What is the operating temperature range of the PL133-27GC-R transistor? A: The transistor can operate within a temperature range of -55°C to +150°C.

3. Q: What is the package type of the PL133-27GC-R transistor? A: It comes in a TO-92 package.

4. Q: What is the power dissipation rating of the PL133-27GC-R transistor? A: The transistor has a power dissipation rating of 625mW.

5. Q: What is the transition frequency of the PL133-27GC-R transistor? A: The transition frequency is 250MHz.

This encyclopedia entry provides an overview of the PL133-27GC-R transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.