AT27BV010-12TI

Product Overview

Category

AT27BV010-12TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High-speed operation: Operates at a speed of 12 nanoseconds.
• Low power consumption: Designed to minimize energy usage.
• Durable: Can withstand harsh environmental conditions.
• Easy integration: Compatible with various electronic systems.

Package

AT27BV010-12TI comes in a compact package that ensures easy installation and integration into electronic devices.

Essence

The essence of AT27BV010-12TI lies in its ability to provide reliable and efficient non-volatile memory storage.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT27BV010-12TI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory capacity: 1 Megabit (128 Kilobytes)
• Operating voltage: 2.7V - 3.6V
• Access time: 12 nanoseconds
• Organization: 128K x 8 bits
• Interface: Parallel
• Temperature range: -40°C to +85°C

Detailed Pin Configuration

The AT27BV010-12TI has the following pin configuration:

1. A0 - Address input
2. A1 - Address input
3. A2 - Address input
4. A3 - Address input
5. A4 - Address input
6. A5 - Address input
7. A6 - Address input
8. A7 - Address input
9. VCC - Power supply
10. CE - Chip enable
11. OE - Output enable
12. WE - Write enable
13. I/O0 - Data input/output
14. I/O1 - Data input/output
15. I/O2 - Data input/output
16. I/O3 - Data input/output
17. I/O4 - Data input/output
18. I/O5 - Data input/output
19. I/O6 - Data input/output
20. I/O7 - Data input/output
21. NC - No connection
22. GND - Ground

Functional Features

• Random access: Allows for quick retrieval of data from any memory location.
• Byte-wise programming: Enables individual bytes to be programmed without affecting others.
• Erase capability: Supports full chip erase or sector erase operations.
• Data protection: Provides hardware and software protection mechanisms to prevent unauthorized access or modification.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High-speed operation allows for efficient data transfer.
• Low power consumption minimizes energy usage.
• Durable design withstands harsh environmental conditions.
• Easy integration into various electronic systems.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per unit compared to some alternatives.
• Requires additional circuitry for proper interfacing with the system.

Working Principles

AT27BV010-12TI utilizes a combination of electronic circuits and semiconductor technology to store and retrieve digital information. It employs a floating-gate transistor structure that allows for non-volatile storage of data by trapping electric charge within the gate region.

Detailed Application Field Plans

AT27BV010-12TI finds applications in various fields, including but not limited to: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models to AT27BV010-12TI include: - AT28C010-12TI - AT29C010A-12TI - AM27C010-12TI - SST39SF010A-70-4C-NHE

These models offer similar functionality and characteristics, providing options for different project requirements.

In conclusion, AT27BV010-12TI is a non-volatile memory device that offers high-speed operation, low power consumption, and durability. It finds applications in various fields and has alternative models available to suit different project needs.