2N7002T-TP: Product Overview and Specifications

Introduction

The 2N7002T-TP is a widely used small signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the category of electronic components. This device is known for its versatile use, specific characteristics, and packaging details.

Basic Information Overview

• Category: Electronic Components
• Use: The 2N7002T-TP is commonly used as a switch in various electronic circuits due to its low voltage and current requirements.
• Characteristics: It exhibits low on-state resistance, high speed switching, and low gate threshold voltage.
• Package: SOT-23 (Small Outline Transistor) package.
• Essence: The essence of 2N7002T-TP lies in its ability to efficiently control the flow of current in electronic circuits.
• Packaging/Quantity: Typically available in reels with varying quantities based on manufacturer specifications.

Specifications

• Drain-Source Voltage (V_DSS): 60V
• Continuous Drain Current (I_D): 115mA
• On-State Resistance (R_DS(ON)): 5 Ohms
• Gate-Source Threshold Voltage (V_GS(TH)): 1-2.5V

Detailed Pin Configuration

The 2N7002T-TP features a standard SOT-23 pin configuration with three pins: 1. Drain (D): Connects to the load or circuit being controlled. 2. Source (S): Connected to the ground or common reference point. 3. Gate (G): Controls the flow of current between the drain and source.

Functional Features

• High-Speed Switching: Enables rapid on/off transitions in electronic circuits.
• Low On-State Resistance: Minimizes power loss and heat generation during operation.
• Low Gate Threshold Voltage: Allows for efficient control with low input voltage levels.

Advantages and Disadvantages

Advantages

• Small form factor
• Low power consumption
• Versatile application in various electronic circuits

Disadvantages

• Limited maximum voltage and current handling capabilities
• Sensitivity to static electricity

Working Principles

The 2N7002T-TP operates based on the principle of field-effect modulation, where the voltage applied to the gate terminal controls the conductivity between the drain and source terminals. When the gate-source voltage exceeds the threshold, the transistor enters the "on" state, allowing current to flow from the drain to the source.

Detailed Application Field Plans

The 2N7002T-TP finds extensive use in the following applications: - Low-power switching circuits - Signal amplification and conditioning - Battery-powered devices - LED lighting control

Detailed and Complete Alternative Models

• BS170: Similar N-channel MOSFET with higher voltage and current ratings.
• IRLML2502: Low threshold voltage MOSFET suitable for low-voltage applications.
• DMG2302: Compact MOSFET with enhanced power handling capabilities.

In conclusion, the 2N7002T-TP serves as a fundamental component in electronic circuits, offering efficient switching and control capabilities within its specified voltage and current limits.

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