Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: Power semiconductor device
Packaging/Quantity: Bulk packaging, quantity varies
The IXFP60N25X3M follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - High voltage and current handling capability - Low conduction losses - Suitable for high power applications
Disadvantages: - Higher cost compared to lower power MOSFETs - Larger physical size due to higher power handling capacity
The IXFP60N25X3M operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow through it with minimal resistance.
This MOSFET is commonly used in high power applications such as: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - Power factor correction circuits
Some alternative models to the IXFP60N25X3M include: - IRFP460: Similar voltage and current ratings - FDP8878: Lower voltage rating but similar current handling capability - STP60NF10: Higher voltage rating and lower current capability
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What is the maximum voltage rating of IXFP60N25X3M?
What is the maximum continuous drain current of IXFP60N25X3M?
What type of package does IXFP60N25X3M come in?
What is the typical on-state resistance of IXFP60N25X3M?
Is IXFP60N25X3M suitable for high-frequency switching applications?
What is the operating temperature range of IXFP60N25X3M?
Does IXFP60N25X3M have built-in protection features?
Can IXFP60N25X3M be used in automotive applications?
What are the typical applications for IXFP60N25X3M?
Is IXFP60N25X3M RoHS compliant?