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IXBX75N170
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IXBX75N170

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability
  • Package: TO-268
  • Essence: Efficient power management
  • Packaging/Quantity: 50 pieces per tube

Specifications

  • Voltage Rating: 170V
  • Current Rating: 75A
  • RDS(ON): 0.009 ohm
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Low RDS(ON) for minimal power dissipation
  • Fast switching speed for improved efficiency
  • High current handling capability for robust performance

Advantages and Disadvantages

Advantages

  • High voltage and current ratings
  • Low on-state resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternatives
  • Sensitive to static electricity

Working Principles

The IXBX75N170 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans

The IXBX75N170 is suitable for a wide range of power switching applications, including but not limited to: - Motor control systems - Power supplies - Inverters - Industrial automation equipment

Detailed and Complete Alternative Models

  • IXBX80N170: Similar specifications with slightly higher current rating
  • IXBX70N160: Lower voltage rating with comparable current handling capacity
  • IXBX75P170: Complementary P-channel MOSFET for use in push-pull configurations

This comprehensive entry provides detailed information about the IXBX75N170, covering its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IXBX75N170 i tekniska lösningar

  1. What is IXBX75N170?

    • IXBX75N170 is a high-power, high-frequency RF transistor designed for use in technical solutions such as RF amplifiers and transmitters.

  2. What is the maximum power output of IXBX75N170?

    • The maximum power output of IXBX75N170 is typically around 75 watts.

  3. What frequency range is IXBX75N170 suitable for?

    • IXBX75N170 is suitable for frequencies in the UHF and microwave range, typically from 400 MHz to 2700 MHz.

  4. What are the key features of IXBX75N170?

    • Key features of IXBX75N170 include high power gain, high efficiency, and excellent linearity, making it ideal for demanding RF applications.

  5. What are the typical applications of IXBX75N170?

    • Typical applications of IXBX75N170 include RF power amplifiers, industrial heating systems, and RF energy applications.

  6. What are the recommended operating conditions for IXBX75N170?

    • The recommended operating voltage for IXBX75N170 is typically around 28 volts, with appropriate matching networks for the desired frequency range.

  7. What are the thermal considerations for using IXBX75N170?

    • Proper heat sinking and thermal management are crucial for maintaining the performance and reliability of IXBX75N170 in high-power applications.

  8. What are the typical performance specifications of IXBX75N170?

    • Typical performance specifications include gain, efficiency, input/output impedance, and linearity under specified operating conditions.

  9. Are there any specific precautions to consider when using IXBX75N170?

    • It's important to ensure proper handling to prevent electrostatic discharge and to follow recommended soldering and mounting procedures.

  10. Where can I find detailed application notes and reference designs for IXBX75N170?

    • Detailed application notes and reference designs for IXBX75N170 can be found on the manufacturer's website or through authorized distributors.