IS66WVE4M16TBLL-70BLI-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, non-volatile
• Package: Ball Grid Array (BGA)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Model: IS66WVE4M16TBLL-70BLI-TR
• Organization: 4M x 16 bits
• Voltage Range: 2.7V - 3.6V
• Speed Grade: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Data Retention: 20 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The IS66WVE4M16TBLL-70BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /CE1
37. /CE2
38. /CE3
39. /CE4
40. /CE5
41. /CE6
42. /CE7
43. /CE8
44. /CE9
45. /CE10
46. /CE11
47. /CE12
48. VSS

Functional Features

• High-speed operation for quick data access
• Low-power consumption for energy efficiency
• Non-volatile memory retains data even when power is disconnected
• Parallel interface allows for fast data transfer
• Wide voltage range for compatibility with various systems

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing - Low-power consumption prolongs battery life in portable devices - Non-volatile memory ensures data integrity during power interruptions - Wide voltage range allows for versatile usage

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per unit compared to some alternatives - Requires additional circuitry for interfacing with microcontrollers

Working Principles

The IS66WVE4M16TBLL-70BLI-TR is based on Flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. This change can be detected and interpreted as either a "0" or a "1" during read operations. The non-volatile nature of the memory ensures that the stored data remains intact even when power is removed.

Detailed Application Field Plans

The IS66WVE4M16TBLL-70BLI-TR is commonly used in applications that require high-speed, non-volatile memory storage. Some potential application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. IS66WVE4M16EBLL-70BLI-TR: Similar specifications, but with extended temperature range (-40°C to +105°C).
2. IS66WVE4M16FBLL-70BLI-TR: Similar specifications, but with faster speed grade (55 ns).
3. IS66WVE4M16GBLL-70BLI-TR: Similar specifications, but with higher endurance (1,000,000 write cycles).

(Note: The above alternative models are for illustrative purposes only and may not represent the complete range of alternatives available in the market.)

This entry provides a comprehensive overview of the IS66WVE4M16TBLL-70BLI-TR memory device, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.