IS64WV25616EDBLL-10CTLA3-TR

Product Overview

Category

IS64WV25616EDBLL-10CTLA3-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS64WV25616EDBLL-10CTLA3-TR is available in a small form factor package, which ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS64WV25616EDBLL-10CTLA3-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: IS64WV25616EDBLL-10CTLA3-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 16M words x 16 bits
• Operating Voltage: 2.5V - 3.3V
• Speed Grade: 10ns (max)
• Interface: Parallel
• Package Type: TFBGA
• Temperature Range: Commercial (-40°C to +85°C)

Detailed Pin Configuration

The pin configuration of IS64WV25616EDBLL-10CTLA3-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /WE
37. /CAS
38. /RAS
39. /CS
40. CLK

Functional Features

• High-speed data transfer
• Random access capability
• Burst mode operation
• Auto-refresh and self-refresh modes
• Low power standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data transfer speeds enhance overall system performance.
• Large storage capacity allows for the storage of extensive amounts of data.
• Low power consumption helps conserve energy in electronic devices.
• Compact package size enables easy integration into space-constrained designs.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Sensitive to electrostatic discharge (ESD), requiring proper handling during installation or replacement.
• Limited compatibility with older systems that do not support synchronous DRAM technology.

Working Principles

IS64WV25616EDBLL-10CTLA3-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of memory cells, organized in rows and columns. The data is accessed by sending specific commands and addresses to the memory controller, which controls the read and write operations.

Detailed Application Field Plans

IS64WV25616EDBLL-10CTLA3-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS64WV25616EDBLL-10CTLA3-TR include: - MT48LC32M16A2P-75IT: 512 Megabit SDRAM, 16M words x 32 bits, 7.5ns speed grade, parallel interface. - K4S561632H-UC60: 256 Megabit SDRAM, 16M words x 16 bits, 6ns speed grade, parallel interface. - AS4C32M16SB-7TCN: