IS64WV25616EDBLL-10BA3-TR

Product Overview

Category

IS64WV25616EDBLL-10BA3-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS64WV25616EDBLL-10BA3-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS64WV25616EDBLL-10BA3-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: IS64WV25616EDBLL-10BA3-TR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 256Mbit x 16
• Operating Voltage: 2.5V - 3.6V
• Speed Grade: 10ns
• Interface: Parallel
• Pin Count: 48
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS64WV25616EDBLL-10BA3-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /WE
35. /CAS
36. /RAS
37. /CS
38. /OE
39. /BA0
40. /BA1
41. VSS
42. VSS
43. VSS
44. VDDQ
45. VDDQ
46. VDDQ
47. VDDQ
48. VDD

Functional Features

• Random access memory (RAM) functionality
• Synchronous operation for high-speed data transfer
• Burst mode support for efficient data retrieval
• Auto-refresh and self-refresh modes for power-saving operation
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient integration
• Reliable performance ensures data integrity and system stability

Disadvantages

• Relatively higher cost compared to other types of memory
• Limited endurance due to finite write cycles
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

IS64WV25616EDBLL-10BA3-TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed and manipulated by sending appropriate control signals and addresses to the memory device.

Detailed Application Field Plans

IS64WV25616EDBLL-10BA3-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial automation systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS64WV25616EDBLL-10BA3-TR include: - MT48LC32M16A2P-75IT: 512Mbit x 16 SDRAM, 10ns speed grade, parallel interface. - K4S561632H-UC75: 256Mbit x 16 SDRAM, 10ns speed grade, parallel interface. - AS