IS64WV10248EDBLL-10CTLA3

Product Overview

Category

IS64WV10248EDBLL-10CTLA3 belongs to the category of semiconductor memory devices.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Compact size

Package

IS64WV10248EDBLL-10CTLA3 is available in a small form factor package, typically a surface mount technology (SMT) package.

Essence

The essence of IS64WV10248EDBLL-10CTLA3 lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS64WV10248EDBLL-10CTLA3 is usually packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Part Number: IS64WV10248EDBLL-10CTLA3
• Memory Size: 1 Megabit (128K x 8)
• Organization: 128K words x 8 bits
• Access Time: 10 ns
• Operating Voltage: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS64WV10248EDBLL-10CTLA3 is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. NC
22. GND

Functional Features

• Random access memory (RAM) functionality
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration with various microcontrollers and processors
• Reliable data retention

Advantages and Disadvantages

Advantages

• Fast access time for quick data retrieval
• Non-volatile memory ensures data persistence even during power loss
• Low power consumption extends battery life in portable devices
• Compact size allows for space-efficient designs

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternatives
• Susceptible to electromagnetic interference

Working Principles

IS64WV10248EDBLL-10CTLA3 operates based on the principles of semiconductor memory technology. It utilizes a combination of transistors and capacitors to store and retrieve digital information. The memory cells are organized in a matrix, with each cell representing a bit of data. The address lines control the selection of specific memory locations, while the control signals manage read and write operations.

Detailed Application Field Plans

IS64WV10248EDBLL-10CTLA3 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Networking equipment - Industrial automation systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS64WV10248EDBLL-10CTLA3 include: - MT45W8MW16BGX-701IT: 8 Megabit (1M x 8) parallel NOR flash memory - AS6C1008-55SIN: 1 Megabit (128K x 8) low-power static random-access memory (SRAM) - AT24C02C-SSHM-T: 2 Kilobit (256 x 8) serial EEPROM

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, IS64WV10248EDBLL-10CTLA3 is a high-speed semiconductor memory device primarily used for data storage in various electronic devices. Its compact size, low power consumption, and reliable performance make it suitable for a wide range of applications. However, its limited storage capacity and susceptibility to electromagnetic interference should be taken into consideration.