IS63WV1024BLL-12BLI-TR

Product Overview

Category

IS63WV1024BLL-12BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Compact package size
• Wide temperature range

Package

IS63WV1024BLL-12BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS63WV1024BLL-12BLI-TR lies in its ability to store and retrieve digital information reliably and quickly.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel containing a specific quantity of IS63WV1024BLL-12BLI-TR units.

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 12 ns
• Organization: 128K words x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS63WV1024BLL-12BLI-TR has the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. WE - Write Enable
11. OE - Output Enable
12. CE - Chip Enable
13. I/O0 - Data Input/Output
14. I/O1 - Data Input/Output
15. I/O2 - Data Input/Output
16. I/O3 - Data Input/Output
17. I/O4 - Data Input/Output
18. I/O5 - Data Input/Output
19. I/O6 - Data Input/Output
20. I/O7 - Data Input/Output
21. NC - No Connection
22. GND - Ground

Functional Features

• Random access memory (RAM) functionality
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into various electronic systems
• Reliable data retention even in harsh environments

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing.
• Non-volatile memory ensures data persistence even during power loss.
• Compact package size enables space-saving designs.
• Wide temperature range makes it suitable for various applications.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per unit compared to some alternative models.
• Requires careful handling to prevent damage during installation.

Working Principles

IS63WV1024BLL-12BLI-TR operates based on the principles of semiconductor memory technology. It utilizes a combination of transistors and capacitors to store and retrieve digital information. When an address is provided, the memory controller activates the corresponding memory cells, allowing data to be read or written.

Detailed Application Field Plans

IS63WV1024BLL-12BLI-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Mobile phones and smartphones - Tablets and handheld devices - Industrial control systems - Automotive electronics - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS63WV1024BLL-12BLI-TR include: - MT45W8MW16BGX-701IT: 8 Megabit (1M x 8) parallel NOR flash memory - AS6C1008-55BIN: 1 Megabit (128K x 8) low-power static random-access memory (SRAM) - AT24C256C-SSHL-T: 256 Kilobit (32K x 8) I2C-compatible electrically erasable programmable read-only memory (EEPROM)

These alternative models can be considered based on specific requirements and system compatibility.

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