IS62WV5128DALL-55T2LI

Product Overview

Category

IS62WV5128DALL-55T2LI belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage device in various electronic systems and applications.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance

Package

IS62WV5128DALL-55T2LI is available in a compact package, suitable for integration into different electronic devices.

Essence

The essence of IS62WV5128DALL-55T2LI lies in its ability to provide fast and efficient data storage and retrieval.

Packaging/Quantity

The product is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Model: IS62WV5128DALL-55T2LI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 3.3V
• Speed Grade: 55 nanoseconds
• Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS62WV5128DALL-55T2LI is as follows:

1. Vcc (Power Supply)
2. WE (Write Enable)
3. OE (Output Enable)
4. A0-A12 (Address Inputs)
5. DQ0-DQ7 (Data Inputs/Outputs)
6. CE1, CE2 (Chip Enables)
7. UB, LB (Upper Byte/Lower Byte Enables)
8. CLK (Clock Input)
9. NC (No Connection)
10. GND (Ground)

Functional Features

• Fast access time for quick data retrieval
• Low power consumption for energy efficiency
• Non-volatile storage capability
• Easy integration into various electronic systems
• Reliable performance in harsh operating conditions

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data processing
• Low power consumption extends battery life in portable devices
• Large storage capacity accommodates complex applications
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Requires careful handling and storage to prevent damage

Working Principles

IS62WV5128DALL-55T2LI operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell storing a single bit of data. Accessing data involves providing the appropriate address and control signals to read from or write to specific memory locations.

Detailed Application Field Plans

IS62WV5128DALL-55T2LI finds application in various fields, including:

1. Embedded systems
2. Networking equipment
3. Industrial automation
4. Automotive electronics
5. Medical devices
6. Consumer electronics

Its high-speed operation, reliability, and low power consumption make it suitable for these diverse applications.

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55TLI: 256 kilobits SRAM, 55 ns speed grade.
2. IS62WV12816BLL-55TLI: 128 kilobits SRAM, 55 ns speed grade.
3. IS62WV5128BLL-55TLI: 512 kilobits SRAM, 55 ns speed grade.

These alternative models offer similar functionality and characteristics to IS62WV5128DALL-55T2LI, providing options for different memory capacity requirements.

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