IS62WV5128DALL-55HLI

Product Overview

Category

IS62WV5128DALL-55HLI belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Reliable performance

Package

IS62WV5128DALL-55HLI is available in a compact and durable package, designed to withstand various environmental conditions.

Essence

The essence of IS62WV5128DALL-55HLI lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS62WV5128DALL-55HLI is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Organization: 32K words x 16 bits
• Interface: Parallel

Detailed Pin Configuration

1. Vcc - Power supply voltage
2. GND - Ground
3. A0-A14 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. RAS - Row address strobe
10. CAS - Column address strobe

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• Fast access time allows for efficient data retrieval.
• Non-volatile memory ensures data retention even when power is lost.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity accommodates a wide range of applications.
• Reliable performance ensures data integrity and system stability.

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance.
• Non-volatile memory eliminates the need for constant power supply.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity caters to diverse data storage requirements.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond the specified capacity.
• Susceptible to electromagnetic interference (EMI) due to parallel interface.

Working Principles

IS62WV5128DALL-55HLI utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast and direct access to the stored information. The memory cells are organized into rows and columns, with address lines used to select specific cells for read or write operations. The control signals, such as write enable (WE) and output enable (OE), facilitate the transfer of data between the memory and the external device.

Detailed Application Field Plans

IS62WV5128DALL-55HLI finds application in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial automation systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55TLI: 256 kilobits SRAM, 55 ns access time, 3.3V operating voltage.
2. IS62WV12816BLL-55TLI: 128 kilobits SRAM, 55 ns access time, 3.3V operating voltage.
3. IS62WV5128BLL-55TLI: 512 kilobits SRAM, 55 ns access time, 3.3V operating voltage.
4. IS62WV102416BLL-55TLI: 1 megabit SRAM, 55 ns access time, 3.3V operating voltage.

(Note: The alternative models listed above are similar in functionality and specifications to IS62WV5128DALL-55HLI, providing options with varying storage capacities.)

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