IS62WV10248BLL-55BI-TR

Product Overview

Category

IS62WV10248BLL-55BI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV10248BLL-55BI-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS62WV10248BLL-55BI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words x 24 bits
• Operating Voltage: 3.3V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of IS62WV10248BLL-55BI-TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 3 | DQ0-DQ23 | Data inputs/outputs | | 4 | WE | Write Enable | | 5 | OE | Output Enable | | 6 | CE | Chip Enable | | 7-48 | NC | No Connection |

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Easy integration into various electronic devices
• Reliable performance in harsh operating conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access speed improves overall system performance.
• Low power consumption helps prolong battery life in portable devices.
• Non-volatile memory retains data even when power is lost.
• Large storage capacity allows for storing a vast amount of data.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance, as the memory cells can only withstand a finite number of write cycles.
• Larger physical size compared to some alternative memory technologies.

Working Principles

IS62WV10248BLL-55BI-TR operates based on the principles of static random access memory (SRAM). It uses flip-flop circuits to store each bit of data. The stored data remains intact as long as power is supplied to the device. The memory cells are organized in a matrix, with each cell being accessed by its unique address.

Detailed Application Field Plans

IS62WV10248BLL-55BI-TR finds applications in various fields, including: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV10248BLL-55BI-TR include: - MT45W1MW16BGX-701IT - CY62157EV30LL-45ZSXI - AS7C34096A-10TIN

These alternative models provide comparable specifications and can be considered as substitutes for IS62WV10248BLL-55BI-TR in different applications.

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