IS61WV51216EEBLL-10T2LI-TR

Product Overview

Category

IS61WV51216EEBLL-10T2LI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV51216EEBLL-10T2LI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV51216EEBLL-10T2LI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV51216EEBLL-10T2LI-TR is as follows:

1. Vcc
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. OE#
28. CE#

Functional Features

• High-speed random access
• Non-volatile storage
• Low power consumption in standby mode
• Easy integration into existing systems
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact package size
• Reliable performance
• Wide operating temperature range

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory solutions

Working Principles

IS61WV51216EEBLL-10T2LI-TR operates based on the principles of static random access memory (SRAM). It stores digital information using a network of flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for quick read and write operations.

Detailed Application Field Plans

IS61WV51216EEBLL-10T2LI-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Automotive electronics - Industrial control systems - Medical equipment - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV51216EEBLL-10T2LI-TR include: - MT48LC32M16A2P-75: Micron Technology Inc. - AS6C4008-55SIN: Alliance Memory Inc. - CY62157EV30LL-45ZSXI: Cypress Semiconductor Corp. - K6R4016V1D-UI10: Samsung Electronics Co., Ltd. - M68AF031AM70MS6: STMicroelectronics

These alternative models provide comparable specifications and can be considered as substitutes for IS61WV51216EEBLL-10T2LI-TR in various applications.

In conclusion, IS61WV51216EEBLL-10T2LI-TR is a high-speed, low-power semiconductor memory product primarily used for data storage in electronic devices. It offers reliable performance, compact package size, and compatibility with various systems. While it has limitations in terms of storage capacity and cost per bit, it serves as a crucial component in numerous applications across different industries.