IS61NVF51236-6.5B3

Product Overview

Category

IS61NVF51236-6.5B3 belongs to the category of Non-Volatile Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The data stored in IS61NVF51236-6.5B3 remains intact even when power is turned off.
• High capacity: This flash memory chip has a capacity of 512 megabits (64 megabytes).
• Fast access time: With a speed of 6.5 nanoseconds, it allows for quick retrieval and storage of data.
• Low power consumption: IS61NVF51236-6.5B3 is designed to minimize energy usage, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

IS61NVF51236-6.5B3 is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Capacity: 512 megabits (64 megabytes)
• Access Time: 6.5 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61NVF51236-6.5B3 is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. WP# - Write protect
9. RY/BY# - Ready/Busy status
10. RESET# - Reset

Functional Features

IS61NVF51236-6.5B3 offers the following functional features:

• Random access: Allows for reading and writing data at any memory location.
• Block erase: Supports erasing large blocks of data, enhancing efficiency.
• Page program: Enables fast programming of individual memory pages.
• Error correction code (ECC): Incorporates ECC to ensure data integrity and reliability.
• Wear leveling: Implements wear leveling algorithms to evenly distribute write operations, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Compact package size
• Reliable data retention

Disadvantages

• Limited endurance: Flash memory has a finite number of write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

IS61NVF51236-6.5B3 utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, these charges are either removed or retained, representing binary values (0s and 1s). The stored data can be accessed by applying appropriate voltages to the address and control pins.

Detailed Application Field Plans

IS61NVF51236-6.5B3 finds applications in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS61NVF51236-6.5B3 include: - IS61NVF25636-6.5B3: 256 megabit (32 megabyte) capacity - IS61NVF102418-6.5B3: 1 gigabit (128 megabyte) capacity - IS61NVF204818-6.5B3: 2 gigabit (256 megabyte) capacity

These alternative models offer different capacities to suit varying storage requirements.

In conclusion, IS61NVF51236-6.5B3 is a non-volatile flash memory chip with high capacity, fast access time, and low power consumption. It finds applications in numerous electronic devices and offers reliable data storage. While it has limitations in terms of endurance and cost, there are alternative models available to cater to different needs.