IS42S83200J-7BLI

Product Overview

Category

IS42S83200J-7BLI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S83200J-7BLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S83200J-7BLI lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42S83200J-7BLI is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 8 Meg x 32
• Speed: 7 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S83200J-7BLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. A16
31. A17
32. A18
33. A19
34. A20
35. A21
36. A22
37. A23
38. A24
39. A25
40. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexibility in performance optimization

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval capabilities enhance overall device performance.
• Low power consumption helps prolong battery life in portable devices.
• Compact size allows for integration into various electronic devices.
• Compatibility with different devices ensures versatility.

Disadvantages

• Limited capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternative memory options.
• Sensitivity to electrical noise may require additional measures for signal integrity.

Working Principles

IS42S83200J-7BLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a bit of information. The data is accessed by sending row and column addresses to select the desired memory location. The stored charge in the capacitors is read or written using voltage levels controlled by the memory controller.

Detailed Application Field Plans

IS42S83200J-7BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S83200J-7BLI include: - MT48LC32M8A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation

These alternative models offer similar functionalities and can be used as substitutes depending on specific requirements.

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