IS42S16100F-7BLI

Product Overview

Category

IS42S16100F-7BLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS42S16100F-7BLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16100F-7BLI lies in its ability to provide fast and efficient data storage and retrieval in various electronic devices.

Packaging/Quantity

IS42S16100F-7BLI is typically packaged in trays or reels, with each package containing a specific quantity of modules depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 1 bit
• Data Rate: 143 MHz
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Pin Count: 54 pins

Detailed Pin Configuration

The pin configuration of IS42S16100F-7BLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VDDQ

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low-power standby mode
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Low power consumption
• Compact package size
• Reliable performance
• Suitable for a wide range of electronic devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative models

Working Principles

IS42S16100F-7BLI operates based on the principles of synchronous dynamic random access memory. It stores and retrieves data by utilizing an array of capacitors that hold charge representing binary values. The memory cells are organized in rows and columns, with each cell storing a single bit of data. The memory controller sends commands and addresses to access specific cells and read or write data.

Detailed Application Field Plans

IS42S16100F-7BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS42S16100F-7BLI are: - IS42S16320D-7TLI - MT48LC16M16A2P-75IT - K4S561632H-UC75

These models offer similar functionality and characteristics, providing options for different design requirements and cost considerations.

In conclusion, IS42S16100F-7BLI is a high-speed and reliable DRAM module used in various electronic devices. Its compact size, low power consumption, and efficient data storage make it suitable for a wide range of applications. While it has limitations in terms of storage capacity and cost