IS42S16100E-6BLI

Product Overview

Category

IS42S16100E-6BLI belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly and efficiently.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16100E-6BLI is available in a small outline, dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16100E-6BLI lies in its ability to provide fast and reliable data storage and retrieval, making it an essential component in modern computing systems.

Packaging/Quantity

IS42S16100E-6BLI is typically packaged individually or in bulk quantities, depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S16100E-6BLI follows a standard pin configuration for SO-DIMM modules. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CKE
42. /CLK
43. VDD
44. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited capacity compared to newer memory technologies
• Relatively higher cost per unit of storage compared to other memory types

Working Principles

IS42S16100E-6BLI operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data is accessed by sending address signals to select the desired location and reading or writing data through the parallel interface.

Detailed Application Field Plans

IS42S16100E-6BLI finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Embedded systems 5. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16100E-6BLI include: 1. IS42S16320D-7TLI 2. MT48LC16M16A2P-75IT 3. K4S561632H-UC75 4. HYB39S256160FE-7.5 5. M12L16161A-7T

These models offer similar specifications and functionality, providing options for different design requirements.

In conclusion, IS42S16100E-6BLI is a high-performance DRAM module with fast data access, large storage capacity, and low power consumption. It is widely used in various electronic devices and computer systems. While it has certain limitations, its advantages make it a valuable component in modern computing applications.