IRS2168DSPBF

Product Overview

Category: Integrated Circuit (IC)

Use: The IRS2168DSPBF is a high-performance half-bridge gate driver IC designed for use in power electronics applications. It provides the necessary drive and protection signals required to control and drive high-power MOSFETs or IGBTs in half-bridge configurations.

Characteristics: - High voltage level shifting capability - Low propagation delay and rise/fall times - Built-in dead-time generation - Overcurrent protection - Undervoltage lockout - Fault reporting

Package: The IRS2168DSPBF is available in a compact and industry-standard 16-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of the IRS2168DSPBF lies in its ability to efficiently drive and control high-power MOSFETs or IGBTs in half-bridge configurations, enabling reliable and precise power electronics applications.

Packaging/Quantity: The IRS2168DSPBF is typically packaged in reels containing 2500 units per reel.

Specifications

• Supply Voltage Range: 10V to 20V
• Output Current: ±200mA
• Operating Temperature Range: -40°C to +125°C
• Maximum Junction Temperature: 150°C
• Input Logic Thresholds: TTL/CMOS compatible
• Output Voltage Swing: 10V to 18V
• Propagation Delay: 100ns (typical)
• Rise/Fall Times: 25ns (typical)

Detailed Pin Configuration

The IRS2168DSPBF features a 16-pin SOIC package with the following pin configuration:

1. VCC: Supply voltage input
2. HO: High-side output
3. LO: Low-side output
4. VB: Bootstrap supply voltage input
5. VS: High-side floating supply voltage input
6. COM: Common connection for bootstrap and floating supply voltage
7. SD: Shutdown input
8. VSS: Ground reference
9. NC: No connection
10. NC: No connection
11. NC: No connection
12. NC: No connection
13. NC: No connection
14. NC: No connection
15. NC: No connection
16. NC: No connection

Functional Features

• High voltage level shifting capability enables efficient control of high-power MOSFETs or IGBTs.
• Built-in dead-time generation prevents shoot-through current and enhances system reliability.
• Overcurrent protection safeguards the power electronics circuitry from excessive currents.
• Undervoltage lockout ensures proper operation within specified voltage ranges.
• Fault reporting feature provides feedback on any detected faults or abnormalities.

Advantages and Disadvantages

Advantages: - High-performance gate driver with excellent voltage level shifting capability. - Compact and industry-standard package for easy integration into various applications. - Built-in protection features enhance system reliability and safety. - Wide operating temperature range allows for versatile usage in different environments.

Disadvantages: - Limited output current may not be suitable for extremely high-power applications. - Requires external components for bootstrap and floating supply voltage generation.

Working Principles

The IRS2168DSPBF operates by receiving input signals from a microcontroller or control circuitry, which are then processed to generate the necessary drive and protection signals for the high-power MOSFETs or IGBTs in a half-bridge configuration. The IC utilizes high voltage level shifting techniques to ensure efficient control of the power devices while providing built-in protection features such as overcurrent protection and undervoltage lockout.

Detailed Application Field Plans

The IRS2168DSPBF finds extensive application in various power electronics fields, including but not limited to: - Motor drives - Switch-mode power supplies - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems

Detailed and Complete Alternative Models

1. IRS2186DSPBF: Similar to IRS2168DSPBF, but with higher output current capability.
2. IRS2153DSPBF: Half-bridge gate driver IC with integrated high-voltage level shifting and protection features.
3. IRS2104SPBF: Full-bridge gate driver IC suitable for driving MOSFETs or IGBTs in full-bridge configurations.

These alternative models offer similar functionality and can be considered based on specific application requirements.

Word count: 529 words